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型号 功能描述 生产厂家 企业 LOGO 操作
2SC6097-E

Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

ONSEMI

安森美半导体

2SC6097-E

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:TRANS NPN 60V 3A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

ONSEMI

安森美半导体

2SC6097-E产品属性

  • 类型

    描述

  • 型号

    2SC6097-E

  • 功能描述

    两极晶体管 - BJT HIGH-CURRENT SWITCHING

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-5-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-251
1259
原厂订货渠道,支持BOM配单一站式服务
onsemi(安森美)
25+
TO-251
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
CONCETP
DIP-18
3200
原装长期供货!
Power Integrations
21+
36
只做原装鄙视假货15118075546
POWER
23+
IGBT-Driver
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
CONCETP
25+23+
DIP-18
44875
绝对原装正品全新进口深圳现货
CONCETP
23+
DIP-18
3000
原装正品假一罚百!可开增票!
POWER INTEGRATION
25+
MODULE
1586
PI全系列在售
CONCEPT
2023+
IGBT
6895
原厂全新正品旗舰店优势现货

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