位置:首页 > IC中文资料 > 2SC608

2SC608晶体管资料

  • 2SC608别名:2SC608三极管、2SC608晶体管、2SC608晶体三极管

  • 2SC608生产厂家:日本日立公司

  • 2SC608制作材料:Si-NPN

  • 2SC608性质:通用型 (Uni)_功率放大 (L)

  • 2SC608封装形式:直插封装

  • 2SC608极限工作电压:75V

  • 2SC608最大电流允许值:1.5A

  • 2SC608最大工作频率:<1MHZ或未知

  • 2SC608引脚数:3

  • 2SC608最大耗散功率:10W

  • 2SC608放大倍数

  • 2SC608图片代号:E-36

  • 2SC608vtest:75

  • 2SC608htest:999900

  • 2SC608atest:1.5

  • 2SC608wtest:10

  • 2SC608代换 2SC608用什么型号代替:BD139,BD169,BD179,BD237,BD441,3DA4C,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching

50V / 13A High-Speed Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

50V / 5A High-Speed Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

SANYO

三洋

50V / 15A High-Speed Switching Applications

50V / 15A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching.

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • Large current capacitance • High speed switching • Low saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High speed switching applications

ISC

无锡固电

Bipolar Transistor

Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching

ONSEMI

安森美半导体

Bipolar Transistor, 50 V, 15 A, Low VCE(sat), NPN TO-220F-3SG

2SC6082 is a Bipolar Transistor, 50 V, 15 A, Low VCE (sat), NPN TO-220F-3SG for High-Speed Switching Application. • Adoption of MBIT process\n• Large current capacitance\n• Low collector to emitter saturation voltage\n• High speed switching;

ONSEMI

安森美半导体

Bipolar Transistor

Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching

ONSEMI

安森美半导体

Silicon NPN Power Transistor

FEATURES ·Large current capacitance ·High speed switching ·Low saturation voltage DESCRIPTION ·Switching Regulator ·Driver Circuit

ISC

无锡固电

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Switching Regulator Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3V(Max) @IC= 2.7A APPLICATIONS · Switching Regulators · Motor drivers ,LED driver,Power supply

ISC

无锡固电

Silicon NPN Epitaxial Type

Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)( IC = 1A) High-speed switching: tstg = 0.4 μs (typ)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 700V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

ONSEMI

安森美半导体

封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 15A TO220F-3SG 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 50V 15A TO220F-3SG 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

文件:296.39 Kbytes Page:2 Pages

ISC

无锡固电

2SC608产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • VCEO Min (V):

    50

  • VCBO (V):

    60

  • VEBO (V):

    6

  • VBE(sat) (V):

    1.2

  • hFE Min:

    200

  • hFE Max:

    560

  • PTM Max (W):

    2

  • Package Type:

    TO-220-3 FullPak

更新时间:2026-5-14 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
4505
电子元器件采购降本30%!原厂直采,砍掉中间差价
SANYO/三洋
2026+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
ON
23+
TO-220F
11846
一级代理商现货批发,原装正品,假一罚十
SANYO/三洋
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
三洋
23+
TO-220IS
80000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
ON(安森美)
23+
17891
公司只做原装正品,假一赔十
SANYO(三洋半导体)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ON/安森美
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

2SC608数据表相关新闻