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2SC608晶体管资料
2SC608别名：2SC608三极管、2SC608晶体管、2SC608晶体三极管
2SC608生产厂家：日本日立公司
2SC608制作材料：Si-NPN
2SC608性质：通用型 （Uni）_功率放大 （L）
2SC608封装形式：直插封装
2SC608极限工作电压：75V
2SC608最大电流允许值：1.5A
2SC608最大工作频率：<1MHZ或未知
2SC608引脚数：3
2SC608最大耗散功率：10W
2SC608放大倍数：
2SC608图片代号：E-36
2SC608vtest：75
2SC608htest：999900
- 2SC608atest：1.5
2SC608wtest：10
2SC608代换 2SC608用什么型号代替：BD139,BD169,BD179,BD237,BD441,3DA4C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching 50V / 13A High-Speed Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit). | SANYO 三洋 |   | ||
NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching 50V / 5A High-Speed Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit). | SANYO 三洋 | | ||
Bipolar Transistor Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching | ONSEMI 安森美半导体 | | ||
50V / 15A High-Speed Switching Applications 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. | SANYO 三洋 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Large current capacitance • High speed switching • Low saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High speed switching applications | ISC 无锡固电 | | ||
Bipolar Transistor Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistor FEATURES ·Large current capacitance ·High speed switching ·Low saturation voltage DESCRIPTION ·Switching Regulator ·Driver Circuit | ISC 无锡固电 | | ||
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process. | SANYO 三洋 | | ||
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process. | SANYO 三洋 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3V(Max) @IC= 2.7A APPLICATIONS · Switching Regulators · Motor drivers ,LED driver,Power supply | ISC 无锡固电 | | ||
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Switching Regulator Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. | SANYO 三洋 | | ||
Silicon NPN Epitaxial Type Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（ IC = 1A） High-speed switching: tstg = 0.4 μs (typ) | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Color TV Horizontal Deflection Output Applications Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. | SANYO 三洋 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 700V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching | ONSEMI 安森美半导体 | | ||
Bipolar Transistor, 50 V, 15 A, Low VCE(sat), NPN TO-220F-3SG | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 15A TO220F-3SG 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 50V 15A TO220F-3SG 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications | ONSEMI 安森美半导体 | | ||
isc Silicon NPN Power Transistor 文件：296.39 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SC608产品属性
- 类型
描述
- 型号
2SC608
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
NPN Epitaxial Planar Silicon Transistor 50V/13A High-Speed Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
23+ |
TO-220F |
640 |
全新原装正品现货,支持订货 |
|||
ON(安森美) |
2511 |
4505 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
三洋 |
23+ |
TO-220IS |
80000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
onsemi(安森美) |
24+ |
TO-220F |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SANYO/三洋 |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
|||
ON(安森美) |
23+ |
17891 |
公司只做原装正品,假一赔十 |
||||
ON |
24+ |
TO-220-3 FullPak |
25000 |
ON全系列可订货 |
|||
SANYO |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
2SC608芯片相关品牌
2SC608规格书下载地址
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2018-12-19
DdatasheetPDF页码索引
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