TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Triple Diffused Type

High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.24 μs (max) (IC = 0.3 A)

Silicon NPN epitaxial planar type

For general amplification Complementary to 2SA2162 Features Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN epitaxial planar type

 Features  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN Epitaxial Type

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Silicon NPN Epitaxial Type

文件：212.71 Kbytes Page：5 Pages

Silicon NPN epitaxial planar type Transistors

三极管(BJT)

封装/外壳：SOT-723 包装：管件 描述：TRANS NPN 12V 0.5A SSSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 12V 0.5A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个