Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN triple diffusion mesa type Power Transistors

Horizontal deflection output for TV, CRT monitor\n\n■ • High breakdown voltage: VCBO ≥ 1 700 V\n• Wide safe operation area;

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf 200 ns • Wide safe operation area

2SC5932

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

2SC5933

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb • SSS-Mini type package, allowing downsizing of the equipment

Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications

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封装/外壳：SC-71 包装：散装 描述：TRANS NPN 600V 1A MSTM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

功率开关晶体管

Horizontal Deflection Switching Transistors

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：89.55 Kbytes Page：4 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：89.55 Kbytes Page：4 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：89.55 Kbytes Page：4 Pages

封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 10V 0.05A SSSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个