2SC579晶体管资料

  • 2SC579别名:2SC579三极管、2SC579晶体管、2SC579晶体三极管

  • 2SC579生产厂家:日本日电公司

  • 2SC579制作材料:Si-NPN

  • 2SC579性质:开关管 (S)

  • 2SC579封装形式:直插封装

  • 2SC579极限工作电压:30V

  • 2SC579最大电流允许值:0.2A

  • 2SC579最大工作频率:<1MHZ或未知

  • 2SC579引脚数:3

  • 2SC579最大耗散功率:0.36W

  • 2SC579放大倍数

  • 2SC579图片代号:D-8

  • 2SC579vtest:30

  • 2SC579htest:999900

  • 2SC579atest:0.2

  • 2SC579wtest:0.36

  • 2SC579代换 2SC579用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX90,BSX91,BSX92,BSX93,BSY62,BSY63,2N2368,2N2368A,2N2369,2N2369A,3DK4A,

型号 功能描述 生产厂家 企业 LOGO 操作

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 6.3A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 1600V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):=3.0V(Max) @IC= 10A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

ISC

无锡固电

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V) • High reliability (Adoption of HVP process). • Adoption of MBIT process.

SANYO

三洋

CRT DEVICE PLAY

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

SANYO

三洋

Horizontal Deflection Switching Transistors

ONSEMI

安森美半导体

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

ONSEMI

安森美半导体

Horizontal Deflection Switching Transistors

ONSEMI

安森美半导体

2SC579产品属性

  • 类型

    描述

  • 型号

    2SC579

  • 制造商

    ON Semiconductor

更新时间:2025-12-25 11:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
T/NEC
23+
CAN
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
24+
NA/
3430
原装现货,当天可交货,原型号开票
TOSHIBA/东芝
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
RENASES
25+
SOT-523
880000
明嘉莱只做原装正品现货
NEC
1922+
SOT-523
35689
原装进口现货库存专业工厂研究所配单供货
NEC
23+
SOT523
5000
专注配单,只做原装进口现货
NEC
23+
0402-3
50000
全新原装正品现货,支持订货
TOSHIBA/东芝
专业铁帽
CAN3
5600
原装铁帽专营,代理渠道量大可订货
NEC
24+
SOT-523
37200
新进库存/原装
T/NEC
2023+
CAN
50000
全新原装现货

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