2SC579晶体管资料

  • 2SC579别名:2SC579三极管、2SC579晶体管、2SC579晶体三极管

  • 2SC579生产厂家:日本日电公司

  • 2SC579制作材料:Si-NPN

  • 2SC579性质:开关管 (S)

  • 2SC579封装形式:直插封装

  • 2SC579极限工作电压:30V

  • 2SC579最大电流允许值:0.2A

  • 2SC579最大工作频率:<1MHZ或未知

  • 2SC579引脚数:3

  • 2SC579最大耗散功率:0.36W

  • 2SC579放大倍数

  • 2SC579图片代号:D-8

  • 2SC579vtest:30

  • 2SC579htest:999900

  • 2SC579atest:0.2

  • 2SC579wtest:0.36

  • 2SC579代换 2SC579用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX90,BSX91,BSX92,BSX93,BSY62,BSY63,2N2368,2N2368A,2N2369,2N2369A,3DK4A,

型号 功能描述 生产厂家&企业 LOGO 操作

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1600V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=800V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):3.0V(Max)@IC=6.3A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=1600V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=3.0V(Max)@IC=10A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1600V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1600V) •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

CRTDEVICEPLAY

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1600V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

2SC579产品属性

  • 类型

    描述

  • 型号

    2SC579

  • 制造商

    ON Semiconductor

更新时间:2025-7-6 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
3430
原装现货,当天可交货,原型号开票
NEC
04+
SOT723
980
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
23+
SOT-423
63000
原装正品现货
RENASES
25+
SOT-523
880000
明嘉莱只做原装正品现货
NEC
24+
SOT-523
37200
新进库存/原装
NEC
07+
914
公司优势库存 热卖中!
NEC
2016+
SOT423
6528
只做进口原装现货!假一赔十!
NEC
2023+
晶体管2
8700
原装现货
NEC
1922+
SOT-523
35689
原装进口现货库存专业工厂研究所配单供货
TOSHIBA/东芝
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票

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