2SC571晶体管资料

  • 2SC571别名:2SC571三极管、2SC571晶体管、2SC571晶体三极管

  • 2SC571生产厂家:日本松下公司

  • 2SC571制作材料:Si-NPN

  • 2SC571性质:甚高频 (VHF)_宽频带放大 (A)_TR

  • 2SC571封装形式:直插封装

  • 2SC571极限工作电压:36V

  • 2SC571最大电流允许值:0.5A

  • 2SC571最大工作频率:175MHZ

  • 2SC571引脚数:3

  • 2SC571最大耗散功率:1W

  • 2SC571放大倍数

  • 2SC571图片代号:C-40

  • 2SC571vtest:36

  • 2SC571htest:175000000

  • 2SC571atest:0.5

  • 2SC571wtest:1.0001

  • 2SC571代换 2SC571用什么型号代替:BFQ42,BFR98,BFS22,BFS51,BSW47,BLW16,BLY33,BLY67,2N3553,3DA106B,

2SC571价格

参考价格:¥1.3316

型号:2SC5712(TE12L,F) 品牌:Toshiba 备注:这里有2SC571多少钱,2025年最近7天走势,今日出价,今日竞价,2SC571批发/采购报价,2SC571行情走势销售排行榜,2SC571报价。
型号 功能描述 生产厂家&企业 LOGO 操作

DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applicat

SANYOSanyo Semicon Device

三洋三洋电机株式会社

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE= 400 to 1000 (IC= 0.5 A) • Low collector-emitter saturation voltage: VCE (sat)= 0.15 V (max) • High-speed switching: tf= 50 ns (typ.)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) • High-speed switching: tf = 90 ns (typ.)

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf (2) = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.

TOSHIBA

东芝

Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications.

Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications.  High voltage: VCBO= 1500 V  Low saturation voltage: VCE (sat)= 3 V (max)  High speed: tf(2) = 0.1 µs (typ.)

TOSHIBA

东芝

High-Speed Switching Applications

文件:169.97 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS NPN 50V 3A PW-MINI 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

High-Speed Switching Applications

文件:169.97 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件:139.03 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件:139.03 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type

文件:139.58 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS NPN 20V 4A PW-MINI 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon NPN Epitaxial Type

文件:139.58 Kbytes Page:5 Pages

TOSHIBA

东芝

2SC571产品属性

  • 类型

    描述

  • 型号

    2SC571

  • 功能描述

    两极晶体管 - BJT NPN 100V VCBO 50V VCEO 3A IC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-7 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
22+
SOT89
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA/东芝
25+
SOT-89
20300
TOSHIBA/东芝原装特价2SC5713即刻询购立享优惠#长期有货
TOSHIBA
24+/25+
7000
原装正品现货库存价优
TOSHIBA
09+
SOT-89
779
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
24+
PW-MINI
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
TOSHIBA
23+
SOT-89
63000
原装正品现货
TOSHIBA/东芝
25+
NA
860000
明嘉莱只做原装正品现货
TOSHIBA/东芝
2450+
SOT89
6540
只做原装正品现货或订货!终端客户免费申请样品!

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