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2SC556晶体管资料
2SC556别名：2SC556三极管、2SC556晶体管、2SC556晶体三极管
2SC556生产厂家：日本东芝公司
2SC556制作材料：Si-NPN
2SC556性质：超高频/特高频 （UHF）_宽频带放大 （A）_TR
2SC556封装形式：直插封装
2SC556极限工作电压：40V
2SC556最大电流允许值：0.4A
2SC556最大工作频率：850MHZ
2SC556引脚数：3
2SC556最大耗散功率：
2SC556放大倍数：
2SC556图片代号：C-40
2SC556vtest：40
2SC556htest：850000000
- 2SC556atest：0.4
2SC556wtest：0
2SC556代换 2SC556用什么型号代替：BFR36,BFR97,BFW16,BFW17,BLW11,2N3866,3DA108B,
2SC556价格
参考价格：￥1.0405
型号：2SC5566-TD-E 品牌：ON 备注：这里有2SC556多少钱，2025年最近7天走势，今日出价，今日竞价，2SC556批发/采购报价，2SC556行情走势销售排行榜，2SC556报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS Switching Regulator and High-Voltage Switching Applications DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max) tf = 0.5 µs (max), (IC = 0.3 A) • High breakdown voltage: VCEO = 800 V • High-speed DC-DC converter applications | TOSHIBA 东芝 |   | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
NPN TRIPLE KIFFUSED TYPE (DYNAMIC FOCUS APPLICATIONS) Dynamic Focus Applications • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF (typ.) (VCB = 100 V) | TOSHIBA 东芝 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Applicat | SANYO 三洋 | | ||
DC/DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers, | SANYO 三洋 | | ||
DC/DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • | SANYO 三洋 | | ||
Bipolar Transistor Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr | ONSEMI 安森美半导体 | | ||
NPN General Purpose Transistor Features » Consumer electronics « Voltage switching « High Speed Switching | TECHPUBLIC 台舟电子 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip | SANYO 三洋 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip | SANYO 三洋 | | ||
Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l | ONSEMI 安森美半导体 | | ||
DC/DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • | SANYO 三洋 | | ||
DC/DC CONVERTER APPLICATIONS DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes | UTC 友顺 | | ||
Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l | ONSEMI 安森美半导体 | | ||
Switching Regulator and High-Voltage Switching 文件：102.84 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
Switching Regulator and High-Voltage Switching 文件：102.84 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. | TOSHIBA 东芝 | | ||
Dynamic Focus Applications 文件：89.96 Kbytes Page：2 Pages | TOSHIBA 东芝 | | ||
Dynamic Focus Applications 文件：89.96 Kbytes Page：2 Pages | TOSHIBA 东芝 | | ||
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications | ONSEMI 安森美半导体 | | ||
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications | ONSEMI 安森美半导体 | | ||
DC / DC Converter Applications 文件：92.81 Kbytes Page：5 Pages | SANYO 三洋 | | ||
DC / DC Converter Applications 文件：473.33 Kbytes Page：8 Pages | SANYO 三洋 | | ||
DC / DC Converter Applications 文件：63.14 Kbytes Page：5 Pages | SANYO 三洋 | | ||
Bipolar Transistor 文件：364.43 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 4A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
DC / DC Converter Applications 文件：472.41 Kbytes Page：8 Pages | SANYO 三洋 | | ||
DC / DC Converter Applications 文件：63.52 Kbytes Page：5 Pages | SANYO 三洋 | | ||
DC / DC Converter Applications 文件：467.68 Kbytes Page：8 Pages | SANYO 三洋 | | ||
DC / DC Converter Applications 文件：472.41 Kbytes Page：8 Pages | SANYO 三洋 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 7A SOT89/PCP-1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
2SC556产品属性
- 类型
描述
- 型号
2SC556
- 制造商
Toshiba America Electronic Components
- 功能描述
Trans GP BJT NPN 1.5KV 0.02A 3-Pin(3+Tab) TO-220NIS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
NA |
5095 |
全新原装正品现货可开票 |
||||
ON |
23+ |
SOT-89 |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
24+ |
SOT-89 |
22048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON(安森美) |
23+ |
SOT-89(SOT-89-3) |
12891 |
公司只做原装正品,假一赔十 |
|||
ON/安森美 |
24+ |
SOT-89(SOT-89-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
SANYO |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
ON |
24+ |
SOT-89 / PCP-1 |
25000 |
ON全系列可订货 |
|||
ON/安森美 |
21+ |
SOT-89 |
32000 |
只做原装正品 |
|||
ON |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON/安森美 |
21+ |
SOT-89(SOT-89-3) |
8080 |
只做原装,质量保证 |
2SC556芯片相关品牌
2SC556规格书下载地址
2SC556参数引脚图相关
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2SC556数据表相关新闻
2SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-302SC5015-T1
https://hch01.114ic.com/
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2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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