NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=1.1dB, |S21e|2=12dB (f=1GHz)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz APPLICATIONS • Designed for use in VHF~ UHF band low noise amplifier.

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz APPLICATIONS • Designed for use in VHF~ UHF band low noise amplifier.

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

Trans GP BJT NPN 12V 0.06A 3-Pin USM