VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : |S21e|2=10.5dB typ (f=1GHz). • High cutoff frequency : fT=6.5GHz typ.

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : |S21e|2=12dB typ (f=1GHz). • High cutoff frequency : fT=7GHz typ. • Very small-sized package permiting 2SC5231-applied sets to be made small and slim.

VHF to UHF Wide-Band Low-Noise Amplifier Applications

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

Silicon NPN Epitaxial

Features ● Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ● Large collector current: IC = 500 mA (max).

NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

Silicon NPN Epitaxial

Features • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications?????????

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage,high speed switching APPLICATIONS • For switching regulator and general purpose applications

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage,high speed switching APPLICATIONS • For switching regulator and general purpose applications

NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件：532.27 Kbytes Page：8 Pages

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件：532.27 Kbytes Page：8 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 10V 0.07A SMCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 0.07A 10V

General Purpose Amplifier Applications

文件：137.69 Kbytes Page：5 Pages

General Purpose Amplifier Applications

文件：137.69 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 12V 0.5A SC59 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Epitaxial Type (PCT process)

文件：433.17 Kbytes Page：5 Pages

Silicon NPN Epitaxial Type (PCT process)

文件：433.17 Kbytes Page：5 Pages

Silicon NPN Power Transistors

文件：128.539 Kbytes Page：4 Pages