Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

Complement to type 2SA1908 Application : Audio and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1908 APPLICATIONS ·Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1908 APPLICATIONS ·Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PML package ·Complement to type 2SA1908 APPLICATIONS ·Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PML package ·Complement to type 2SA1909 APPLICATIONS ·Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1909 APPLICATIONS ·Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1909 APPLICATIONS ·Audio and general purpose

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose

双极型晶体管

硅 NPN 三重扩散型晶体管 ・适用于功放输出段。\n・有配对品。\n・ASO 较广。;

丝印代码：C5103；High speed switching transistor (60V, 5A)

Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 μs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952.

High speed switching transistor (60V, 5A)

Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 μs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952.

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling di

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATIONS)

For VCO Application

For VCO Application

For VCO Application

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

For VCO Application

For VCO Application

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

FOR VCO APPLICAITONS

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

FOR VCO APPLICATION

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VCO APPLICATION

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

High frequency amplifier

Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

Silicon NPN triple diffusion planar type

■ Features ● High collector to base voltage VCBO ● High collector to emitter VCEO ● Small collector output capacitance Cob ● TO-126 package, which is fitted to a heat sink without any insulation parts

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage switching Applications • High breakdown voltage: VCEO= 400 V • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 20 mA, IB= 0.5 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PML package · High voltage switchihg transistor APPLICATIONS · Display horizontal deflection output · Switching regulator and general purpose VCBO Collector-base voltage Open emitter 1500V VCEO Collector-emitter voltage Open base 800V VEBO Emitter-base voltage Open c

Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

High Voltage Switchihg Transistor Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PML package · High voltage switchihg transistor APPLICATIONS · Display horizontal deflection output · Switching regulator and general purpose VCBO Collector-base voltage Open emitter 1500V VCEO Collector-emitter voltage Open base 800V VEBO Emitter-base voltage Open c

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PML package · High voltage switchihg transistor APPLICATIONS · Display horizontal deflection output · Switching regulator and general purpose VCBO Collector-base voltage Open emitter 1500V VCEO Collector-emitter voltage Open base 800V VEBO Emitter-base voltage Open c

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC5152 is a silicon NPN epitaxail planar type transistor specifically designed for high power amplifiers in VHF band. FEATURES ● High power output and high gain: Po ≥ 80W, Gpe ≥ 7.2dB, @VCC = 12.5V, f = 175MHz, Pin = 15W ● Emitter ballasted construction. ● Load mismatch : Abi

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed • High voltage • Low saturation voltage APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Silicon Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed • High voltage • Low saturation voltage APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed • High voltage • Low saturation voltage APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

Character Display Horizontal Deflection Output

Features • High breakdown voltage VCES = 1500 V, IC = 8 A • Built–in damper diode type • Isolated package TO-3P•FM Application Character display horizontal deflection output

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Application VHF/UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz

VHF / UHF wide band amplifier

Silicon NPN Epitaxial Features • High gain bandwidth product fT= 9 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications