2SC509晶体管资料

  • 2SC509别名:2SC509三极管、2SC509晶体管、2SC509晶体三极管

  • 2SC509生产厂家:日本东芝公司

  • 2SC509制作材料:Si-NPN

  • 2SC509性质:通用型 (Uni)

  • 2SC509封装形式:直插封装

  • 2SC509极限工作电压:35V

  • 2SC509最大电流允许值:0.5A

  • 2SC509最大工作频率:100MHZ

  • 2SC509引脚数:3

  • 2SC509最大耗散功率:0.6W

  • 2SC509放大倍数

  • 2SC509图片代号:A-70

  • 2SC509vtest:35

  • 2SC509htest:100000000

  • 2SC509atest:0.5

  • 2SC509wtest:0.6

  • 2SC509代换 2SC509用什么型号代替:BC337,BC377,BC635,BC637,BC639,BC737,2N2221,2N2222,3DK4A,

2SC509价格

参考价格:¥0.9565

型号:2SC5092-O(TE85L,F) 品牌:Toshiba 备注:这里有2SC509多少钱,2025年最近7天走势,今日出价,今日竞价,2SC509批发/采购报价,2SC509行情走势销售排行榜,2SC509报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 10 GHz TYP. • High Gain, Low Noise Figure ︱ S21e︱ 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS • Designed for VHF~UHF band low noise amplifier applications.

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications  Low noise figure, high gain.  NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc Silicon NPN Low Noise Bipolar Transistor

DESCRIPTION ·Low Noise Figure NF = 1.4 dB TYP. @VCE = 6V, IC = 3mA, f = 1GHz ·High Gain ︱S21︱2 =13dB TYP. @VCE= 6 V,IC = 7 mA,f = 1GHz APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

ISC

无锡固电

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

TOSHIBA

东芝

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications ● Low noise figure, high gain. ● NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 10dB (f = 2 GHz)

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

TOSHIBA

东芝

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application : Audio and General Purpose

Sanken

三垦

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1907 APPLICATIONS ·Audio and general purpose

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1907 APPLICATIONS ·Audio and general purpose

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1907 APPLICATIONS ·Audio and general purpose

JMNIC

锦美电子

Silicon NPN Epitaxial Planar Type

文件:986 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type

文件:986 Kbytes Page:7 Pages

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:111.97 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:111.97 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:1.00497 Mbytes Page:7 Pages

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:1.00497 Mbytes Page:7 Pages

TOSHIBA

东芝

封装/外壳:SC-70,SOT-323 包装:散装 描述:RF TRANS NPN 10V 10GHZ SC70 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:112.75 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:112.75 Kbytes Page:3 Pages

TOSHIBA

东芝

封装/外壳:SC-75,SOT-416 包装:托盘 描述:RF TRANS NPN 10V 10GHZ SSM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:985.68 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

文件:985.68 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Planar Transistor

文件:32.86 Kbytes Page:1 Pages

Sanken

三垦

Silicon NPN Power Transistors

文件:190.34 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:127.58 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Triple Diffused Planar Transistor

文件:32.39 Kbytes Page:1 Pages

Sanken

三垦

Silicon NPN Power Transistors

文件:193.8 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:193.8 Kbytes Page:4 Pages

JMNIC

锦美电子

2SC509产品属性

  • 类型

    描述

  • 型号

    2SC509

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TOSHIBA TRANSISTOR TO 35V .8A .6W ECB

更新时间:2025-12-25 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOS
19+
SOT343
20000
3000
TOSHIBA/东芝
25+
SOT343
860000
明嘉莱只做原装正品现货
TOS
24+
SOT343
18560
假一赔十全新原装现货特价供应工厂客户可放款
TOSHIBA/东芝
24+
NA/
6250
原装现货,当天可交货,原型号开票
TOS
24+
SOT343
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TOSHIBA
23+
NA
11486
专做原装正品,假一罚百!
TOS
25+23+
SOT343
28816
绝对原装正品现货,全新深圳原装进口现货
TOSHIBA
24+
SOT-343SOT-323-4
48200
新进库存/原装
TOSHIBA/东芝
2450+
SOT343-4
6540
只做原装正品现货或订货!终端客户免费申请样品!

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