High Voltage Transistors

High Voltage Transistors

Low-Frequency General-Purpose Amp, Driver Applications?

Low-Frequency General-Purpose Amplifier, Driver Applications Features · High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

双极型晶体管

硅 NPN 三重扩散型晶体管 ・高耐压品。\n・开关时间快。;

Power transistor for high-speed switching applications

Application Scope：Switching regulators\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 2 A \nCollector power dissipation PC 1.3 W \nCollector-Base Voltage VCBO 500 V \nCollector-emitter voltage VCEO 400 V ;

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max) • High breakdown voltage: VCEO = 400 V

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package with outstanding insulation, which can b

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package with outstanding insulation, which can b

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Application • VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Application • VHF / UHF wide band amplifier

Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-3P

Silicon NPN Power Transistors

文件：176.45 Kbytes Page：4 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR） 描述：TRANS NPN 400V 12A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Triple Diffused Planar Transistor

文件：33.2 Kbytes Page：1 Pages

Silicon NPN Power Transistor

文件：126.53 Kbytes Page：2 Pages

Silicon NPN Triple Diffused Planar Transistor

文件：32.729 Kbytes Page：1 Pages

Silicon NPN Power Transistors

文件：189.6 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：189.6 Kbytes Page：4 Pages

Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

文件：136.12 Kbytes Page：5 Pages

Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

文件：136.12 Kbytes Page：5 Pages

High-Current Switching Applications.

文件：153.47 Kbytes Page：5 Pages

High-Current Switching Applications.

文件：153.47 Kbytes Page：5 Pages