2SC506晶体管资料

  • 2SC506别名:2SC506三极管、2SC506晶体管、2SC506晶体三极管

  • 2SC506生产厂家:日本东芝公司

  • 2SC506制作材料:Si-NPN

  • 2SC506性质:VIS

  • 2SC506封装形式:直插封装

  • 2SC506极限工作电压:200V

  • 2SC506最大电流允许值:0.2A

  • 2SC506最大工作频率:60MHZ

  • 2SC506引脚数:3

  • 2SC506最大耗散功率:0.6W

  • 2SC506放大倍数

  • 2SC506图片代号:C-40

  • 2SC506vtest:200

  • 2SC506htest:60000000

  • 2SC506atest:0.2

  • 2SC506wtest:0.6

  • 2SC506代换 2SC506用什么型号代替:BF258,BF259,BF337,BF658,BFR58,BFR59,BFT48,2N5058,2N5059,3DG180E,

2SC506价格

参考价格:¥0.5967

型号:2SC5065-Y(TE85L,F) 品牌:Toshiba 备注:这里有2SC506多少钱,2025年最近7天走势,今日出价,今日竞价,2SC506批发/采购报价,2SC506行情走势销售排行榜,2SC506报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC506

HighVoltageTransistors

HighVoltageTransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

Powertransistor(90짹10,3A)

2SD2396-LowFrequencyTransistor(60V,3A) 2SC5060-PowerTransistor(90±10V,3A)

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching)

SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●Ntypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,e

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconNPNTripleDiffusionPlanarType

Features ●High-speedswitching ●HighcollectortobasevoltageVCBOWideareaofsafeoperation(ASO)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(WHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHFtoUHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHFtoUHFBandLowNoiseAmplifierApplications

VHFtoUHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHFtoUHFBandLowNoiseAmplifierApplications

VHFtoUHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.1dB,|S21e|2=12dB(f=1GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

Low-FrequencyGeneral-PurposeAmp,DriverApplications?

Low-FrequencyGeneral-PurposeAmplifier,DriverApplications Features •Highcurrentcapacity. •AdoptionofMBITprocess. •HighDCcurrentgain. •Lowcollector-to-emittersaturationvoltage. •HighVEBO.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

NPNEpitaxialPlanarSiliconTransistor

Features ●Highcurrentcapacity. ●AdoptionofMBITprocess. ●HighDCcurrentgain. ●Lowcollector-to-emittersaturationvoltage. ●HighVEBO.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Powertransistor(90-10V,3A)

文件:171.37 Kbytes Page:4 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

Powertransistor(90-10V,3A)

文件:171.37 Kbytes Page:4 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

1.2WPACKAGEPOWERTAPEDTRANSISTORDESIGNEDFORUSEWITHANAUTOMATICPLACEMENTMECHINE

文件:88.13 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTORSTO92LTO-92LSMRT

文件:195.39 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTORSTO92LTO-92LSMRT

文件:195.39 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

1.2WPACKAGEPOWERTAPEDTRANSISTORDESIGNEDFORUSEWITHANAUTOMATICPLACEMENTMECHINE

文件:88.13 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:993.09 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LowNoiseandHighGain

文件:326.34 Kbytes Page:7 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:993.09 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNRFTransistor

文件:252.53 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:995.87 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:995.87 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 7GHZ USM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:RF TRANS NPN 12V 7GHZ USM 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

VHF~UHFBandLowNoiseAmplifierApplications

文件:458.79 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:980.65 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:112.14 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanarTypeVHF~UHFBandLowNoiseAmplifierApplications

文件:112.14 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

文件:458.79 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

VHF~UHFBandLowNoiseAmplifierApplications

文件:458.79 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC506产品属性

  • 类型

    描述

  • 型号

    2SC506

  • 功能描述

    High Voltage Transistors

更新时间:2025-7-19 23:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
TOSHIBA(东芝)
24+
NA/
8735
原厂直销,现货供应,账期支持!
TOSHIBA
2016+
SOT-523
3500
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
23+
SOT23
20000
全新原装假一赔十
SANYO/三洋
22+
SOT89
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
25+
SOT423
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA
05+
SOT23
2145
全新原装进口自己库存优势
TOSHIBA/东芝
25+
NA
880000
明嘉莱只做原装正品现货
TOSHIBA/东芝
21+
SOT-523
60000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
SOT-89
63000
原装正品现货

2SC506芯片相关品牌

  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • KG
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

2SC506数据表相关新闻

  • 2SC4617G-SOT323R-R-TG_UTC代理商

    2SC4617G-SOT323R-R-TG_UTC代理商

    2023-2-15
  • 2SC5353BL-TO126CK-TG

    2SC5353BL-TO126CK-TG

    2023-1-30
  • 2SC5569G-SOT89R-TG

    2SC5569G-SOT89R-TG

    2023-1-30
  • 2SC5015-T1

    https://hch01.114ic.com/

    2020-11-13
  • 2SC5299

    2SC5299,全新原装当天发货或门市自取0755-82732291.

    2020-4-24
  • 2SC4617TLR

    深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生

    2020-4-22