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2SC479晶体管资料
2SC479别名:2SC479三极管、2SC479晶体管、2SC479晶体三极管
2SC479生产厂家:日本日立公司
2SC479制作材料:Si-NPN
2SC479性质:开关管 (S)
2SC479封装形式:直插封装
2SC479极限工作电压:60V
2SC479最大电流允许值:0.6A
2SC479最大工作频率:<1MHZ或未知
2SC479引脚数:3
2SC479最大耗散功率:0.65W
2SC479放大倍数:
2SC479图片代号:C-40
2SC479vtest:60
2SC479htest:999900
- 2SC479atest:0.6
2SC479wtest:0.65
2SC479代换 2SC479用什么型号代替:BSS13,BSS14,BSS27,BSV77,BSV95,BSX30,2N5189,2SC1072,
2SC479价格
参考价格:¥1.8555
型号:2SC4793(F,M) 品牌:Toshiba 备注:这里有2SC479多少钱,2025年最近7天走势,今日出价,今日竞价,2SC479批发/采购报价,2SC479行情走势销售排行榜,2SC479报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Silicon NPN Epitaxial Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837 | TOSHIBA 东芝 | |||
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications | UTC 友顺 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications | JMNIC 锦美电子 | |||
20 Watt Silicon Epitaxial Planar Process NPN Power Transistor DESCRIPTION • With TO-220F package outline • Complement to type 2SA1837 APPLICATIONS • Power amplifier applications • Recommended for Driver Stage Amplifier Applications | THINKISEMI 思祁半导体 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SA1837 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SA1837 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications | LUGUANG 鲁光电子 | |||
NPN Silicon Power Transistors Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Complementary to 2SA1837 | MCC 美微科 | |||
Power Amplifier Applications FEATURES • High collector voltage˖ VCEO=230V (min) • Complementary to 2SA1937 • High transition frequency :fT=100MHz(Typ.) • RoHS product APPLICATIONS • Power Amplifier Applications | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
High Frequency NPN Power Transistor FEATURES • High transition frequency: fT = 100MHz (typ.) • Complementary to 2SA1837AF • TO-220F package which can be installed to the heat sink with one screw APPLICATIONS • Power amplifier • Driver stage amplifier | NELLSEMI 尼尔半导体 | |||
Silicon NPN transistor in a TO-252 Plastic Package. Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High fT, complementary pair with 2SA1837D. Applications Power amplifier and driver stage amplifier applications. | FOSHAN 蓝箭电子 | |||
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications | UTC 友顺 | |||
Power Amplifier Applications FEATURES • High collector voltage˖ VCEO=230V (min) • Complementary to 2SA1937 • High transition frequency :fT=100MHz(Typ.) • RoHS product APPLICATIONS • Power Amplifier Applications | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications | UTC 友顺 | |||
MOLD TYPE BIPOLAR TRANSISTORS MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CBO= 1700V(Min) • High Switching Speed • High Reliability • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Ultrahigh-definition color display horizontal deflection output | ISC 无锡固电 | |||
Silicon NPN Triple Diffused Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM Application TV / character display horizontal deflection output | HitachiHitachi Semiconductor 日立日立公司 | |||
Power Bipolar Transistors
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
Silicon NPN Triple Diffused Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM Application TV / character display horizontal deflection output | HitachiHitachi Semiconductor 日立日立公司 | |||
Power Bipolar Transistors
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
Power Bipolar Transistors
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
isc Silicon NPN Power Transistor 文件:249.01 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power Amplifier Applications 文件:131.68 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Silicon NPN Power Transistors 文件:247.69 Kbytes Page:4 Pages | SAVANTIC | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
Silicon NPN Power Transistors 文件:44.32 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 230V 1A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 230V 1A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
Silicon NPN Epitaxial Type Power Amplifier Applications 文件:125.26 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
Silicon NPN Power Transistors 文件:44.32 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
isc Silicon NPN Power Transistor 文件:249.01 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon NPN Power Transistors 文件:44.32 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Power Amplifier Applications Driver Stage Amplifier Applications 文件:131.68 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
Power Amplifier Applications 文件:131.68 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN SILICON TRANSISTOR 文件:52.21 Kbytes Page:4 Pages | UTC 友顺 | |||
BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS 文件:67.72 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
isc Silicon NPN Power Transistor 文件:272.91 Kbytes Page:2 Pages | ISC 无锡固电 |
2SC479产品属性
- 类型
描述
- 型号
2SC479
- 功能描述
TRANS NPN 230V 1A TO220NIS
- RoHS
否
- 类别
分离式半导体产品 >> 晶体管(BJT) - 单路
- 系列
-
- 标准包装
1
- 系列
-
- 晶体管类型
NPN 电流 -
- 集电极(Ic)(最大)
1A 电压 -
- 集电极发射极击穿(最大)
30V
- Ib、Ic条件下的Vce饱和度(最大)
200mV @ 100mA,1A 电流 -
- 集电极截止(最大)
100nA 在某 Ic、Vce
- 时的最小直流电流增益(hFE)
300 @ 500mA,5V 功率 -
- 最大
710mW 频率 -
- 转换
100MHz
- 安装类型
表面贴装
- 封装/外壳
TO-236-3,SC-59,SOT-23-3
- 供应商设备封装
SOT-23-3(TO-236)
- 包装
Digi-Reel®
- 其它名称
MMBT489LT1GOSDKR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
6077 |
原装现货,当天可交货,原型号开票 |
|||
ST |
23+ |
DO-214AC |
25000 |
全新原装假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
SOT143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA |
24+/25+ |
1061 |
原装正品现货库存价优 |
||||
TOSHIBA |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
|||
RENESAS |
23+ |
SOT-143 |
63000 |
原装正品现货 |
|||
TOS |
23+ |
TO-220 |
9526 |
||||
TOS |
23+ |
TO-220F |
5000 |
专做原装正品,假一罚百! |
|||
TOSHIBA |
25+23+ |
TO-220F |
24410 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
TOSHIBA |
23+ |
TO220F |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
2SC479规格书下载地址
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2SC479数据表相关新闻
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2019-2-15
DdatasheetPDF页码索引
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