2SC479晶体管资料

  • 2SC479别名:2SC479三极管、2SC479晶体管、2SC479晶体三极管

  • 2SC479生产厂家:日本日立公司

  • 2SC479制作材料:Si-NPN

  • 2SC479性质:开关管 (S)

  • 2SC479封装形式:直插封装

  • 2SC479极限工作电压:60V

  • 2SC479最大电流允许值:0.6A

  • 2SC479最大工作频率:<1MHZ或未知

  • 2SC479引脚数:3

  • 2SC479最大耗散功率:0.65W

  • 2SC479放大倍数

  • 2SC479图片代号:C-40

  • 2SC479vtest:60

  • 2SC479htest:999900

  • 2SC479atest:0.6

  • 2SC479wtest:0.65

  • 2SC479代换 2SC479用什么型号代替:BSS13,BSS14,BSS27,BSV77,BSV95,BSX30,2N5189,2SC1072,

2SC479价格

参考价格:¥1.8555

型号:2SC4793(F,M) 品牌:Toshiba 备注:这里有2SC479多少钱,2025年最近7天走势,今日出价,今日竞价,2SC479批发/采购报价,2SC479行情走势销售排行榜,2SC479报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837

TOSHIBA

东芝

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications

UTC

友顺

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1837 • High transition frequency APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

JMNIC

锦美电子

20 Watt Silicon Epitaxial Planar Process NPN Power Transistor

DESCRIPTION • With TO-220F package outline • Complement to type 2SA1837 APPLICATIONS • Power amplifier applications • Recommended for Driver Stage Amplifier Applications

THINKISEMI

思祁半导体

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SA1837 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SA1837 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications

LUGUANG

鲁光电子

NPN Silicon Power Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Complementary to 2SA1837

MCC

美微科

Power Amplifier Applications

FEATURES • High collector voltage˖ VCEO=230V (min) • Complementary to 2SA1937 • High transition frequency :fT=100MHz(Typ.) • RoHS product APPLICATIONS • Power Amplifier Applications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

High Frequency NPN Power Transistor

FEATURES • High transition frequency: fT = 100MHz (typ.) • Complementary to 2SA1837AF • TO-220F package which can be installed to the heat sink with one screw APPLICATIONS • Power amplifier • Driver stage amplifier

NELLSEMI

尼尔半导体

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High fT, complementary pair with 2SA1837D. Applications Power amplifier and driver stage amplifier applications.

FOSHAN

蓝箭电子

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications

UTC

友顺

Power Amplifier Applications

FEATURES • High collector voltage˖ VCEO=230V (min) • Complementary to 2SA1937 • High transition frequency :fT=100MHz(Typ.) • RoHS product APPLICATIONS • Power Amplifier Applications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR ■ FEATURES * High transition frequency * Power amplifier applications * Driver stage amplifier applications

UTC

友顺

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

ETCList of Unclassifed Manufacturers

未分类制造商

Power Bipolar Transistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : V(BR)CBO= 1700V(Min) • High Switching Speed • High Reliability • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Ultrahigh-definition color display horizontal deflection output

ISC

无锡固电

Silicon NPN Triple Diffused

Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM Application TV / character display horizontal deflection output

HitachiHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Silicon NPN Triple Diffused

Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM Application TV / character display horizontal deflection output

HitachiHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Power Bipolar Transistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

isc Silicon NPN Power Transistor

文件:249.01 Kbytes Page:2 Pages

ISC

无锡固电

Power Amplifier Applications

文件:131.68 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

文件:247.69 Kbytes Page:4 Pages

SAVANTIC

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

Silicon NPN Power Transistors

文件:44.32 Kbytes Page:3 Pages

JMNIC

锦美电子

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 230V 1A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 230V 1A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon NPN Epitaxial Type Power Amplifier Applications

文件:125.26 Kbytes Page:4 Pages

TOSHIBA

东芝

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

Silicon NPN Power Transistors

文件:44.32 Kbytes Page:3 Pages

JMNIC

锦美电子

isc Silicon NPN Power Transistor

文件:249.01 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:44.32 Kbytes Page:3 Pages

JMNIC

锦美电子

Power Amplifier Applications Driver Stage Amplifier Applications

文件:131.68 Kbytes Page:4 Pages

TOSHIBA

东芝

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

Power Amplifier Applications

文件:131.68 Kbytes Page:4 Pages

TOSHIBA

东芝

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

文件:52.21 Kbytes Page:4 Pages

UTC

友顺

BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

文件:67.72 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

isc Silicon NPN Power Transistor

文件:272.91 Kbytes Page:2 Pages

ISC

无锡固电

2SC479产品属性

  • 类型

    描述

  • 型号

    2SC479

  • 功能描述

    TRANS NPN 230V 1A TO220NIS

  • RoHS

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    -

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)(最大)

    1A 电压 -

  • 集电极发射极击穿(最大)

    30V

  • Ib、Ic条件下的Vce饱和度(最大)

    200mV @ 100mA,1A 电流 -

  • 集电极截止(最大)

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA,5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3,SC-59,SOT-23-3

  • 供应商设备封装

    SOT-23-3(TO-236)

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

更新时间:2025-8-7 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
6077
原装现货,当天可交货,原型号开票
ST
23+
DO-214AC
25000
全新原装假一赔十
RENESAS/瑞萨
23+
SOT143
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA
24+/25+
1061
原装正品现货库存价优
TOSHIBA
2016+
TO-220F
6528
房间原装进口现货假一赔十
RENESAS
23+
SOT-143
63000
原装正品现货
TOS
23+
TO-220
9526
TOS
23+
TO-220F
5000
专做原装正品,假一罚百!
TOSHIBA
25+23+
TO-220F
24410
绝对原装正品现货,全新深圳原装进口现货
TOSHIBA
23+
TO220F
3200
绝对全新原装!优势供货渠道!特价!请放心订购!

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