NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • Complementary to 2SA1805 • Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS • Power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • Complementary to 2SA1805 • Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS • Power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • Complementary to 2SA1805 • Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS • Power amplifier applications

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ lc= 7A • Complement to Type 2SA1805 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage app

Silicon NPN epitaxial planer type(For high speed switching)

Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

For High-Speed Switching

Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

SILICON NPN TRIPLE DIFFUSED DIFFUSED

Application EDTV / HDTV horizontal deflection output Features 1. High Speed Switching 0.5us Max 2. High breakdown voltage Vceo = 1500V 3. Isolated package, TO-3PFM

Power Bipolar Transistors

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 5.0V(Max) @IC=10A APPLICATIONS ·EDTV/HDTV Horizontal Ddflection output

Silicon NPN Epitaxial Planar

Features • High gain bandwidth product fT = 2.5 GHz Typ. • Large collector power dissipation PC = 900 mW Application VHF Wide band amplifier

Low-Frequency General-Purpose Amp, Muting Applications????????????

Low-Frequency General-Purpose Amplifier, Muting Applications Features • Adoption of MBIT process. • High DC current gain. • High VEBO (VEBO≥25V). • High reverse hFE (150 typ). • Small ON resistance [Ron=1Ω (IB=5mA)]. • Very small-sized package permitting 2SC4694-applied sets to be made smal

NPN Epitaxial Planar Silicon Transistors

Features ● Adoption of MBIT process. ● High DC current gain. ● High VEBO (VEBO 25V). ● High reverse hFE (150 typ). ● Small ON resistance [Ron=1Ù (IB=5mA)].

Low-Frequency General-Purpose Amp, Muting Applications

Low-Frequency General-Purpose Amplifier, Muting Applications Features · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4695-applied sets

NPN Epitaxial Planar Silicon Transistor

Features Adoption of FBET process. High DC current gain. High VEBO (VEBO 25V). High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)].

Driver Applications

Driver Applications Features • Darlington connection. • On-chip Zener diode of 90±10V between collector and base. • High DC current gain. • High inductive load handling capability. Applications • Motor drivers, printer hammer drivers.

Power Bipolar Transistors

Silicon NPN Power Transistors

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Power Amplifier Applications

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Power Amplifier Applications

文件：127.89 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：204.41 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：204.41 Kbytes Page：4 Pages

Small-signal device - Small-signal transistor - High-Speed Switch稸CO and High Freq.

Small-signal device - Small-signal transistor - High-Speed Switch稸CO and High Freq.

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.1A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Triple Diffused