2SC468晶体管资料

  • 2SC468别名:2SC468三极管、2SC468晶体管、2SC468晶体三极管

  • 2SC468生产厂家:日本日立公司

  • 2SC468制作材料:Si-NPN

  • 2SC468性质:射频/高频放大 (HF)_开关管 (S)

  • 2SC468封装形式:直插封装

  • 2SC468极限工作电压:40V

  • 2SC468最大电流允许值:0.2A

  • 2SC468最大工作频率:450MHZ

  • 2SC468引脚数:3

  • 2SC468最大耗散功率:0.2W

  • 2SC468放大倍数

  • 2SC468图片代号:C-47

  • 2SC468vtest:40

  • 2SC468htest:450000000

  • 2SC468atest:0.2

  • 2SC468wtest:0.2

  • 2SC468代换 2SC468用什么型号代替:BF199,BF224,BF311,BF373,BSS11,BSX19,BSX20,2N2368(A),2N2369(A),3DG130C,

型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNPNEpitaxial

Features •LowRonandhighperformanceforRFswitch. •Capableofhighdensitymounting. Application VHF/UHFhighfrequencyswitching

HitachiHitachi Semiconductor

日立日立公司

Hitachi

NPNEPITAXIALTYPE(STROBEFLASHAPPLICATIONSMEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=200to600(VCE=2V,IC=0.5A) :hFE(2)=140(min),200(typ.)(VCE=2V,IC=3A) •Lowcollectorsaturationvoltage :VCE(sat)=0.5V(max)(IC=3A,IB=60mA) •Co

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity:hFE(1)=800to3200(VCE=1V,IC=0.5A) :hFE(2)=500(typ.)(VCE=1V,IC=3A) •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=3A,IB=30mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

STROBEFLASHAPPLICATIONSMEDIUMPOWERAMPLIFIERAPPLICATIONS

STROBEFLASHAPPLICATIONS MEDIUMPOWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgain :hFE(1)=800to3200(VCE=2V,IC=0.5A) :hFE(2)=250(VCE=2V,IC=4A) •Lowcollectorsaturationvoltage :VCE(sat)=0.5V(max)(IC=4A,IB=40mA) •Highpowerd

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxial

Features HighDCcurrentgain. Lowcollectorsaturationvoltage. Highpowerdissipation.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgain:hFE(1)=800to3200(VCE=2V,IC=0.5A) :hFE(2)=250(VCE=2V,IC=4A) •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=4A,IB=40mA) •Highc

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDPLANARTYPE(TVDYNAMICFOCUS,HIGHVOLTAGESWITCHING,AMPLIFIERAPPLICATIONS)

TVDYNAMICFOCUSAPPLICATIONS HIGHVOLTAGESWITCHINGAPPLICATIONS HIGHVOLTAGEAMPLIFIERAPPLICATIONS HighVoltageVceo=1200V(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDPLANARTYPE(TVDYNAMICFOCUS,HIGHVOLTAGESWITCHING,AMPLIFIERAPPLICATIONS)

TVDYNAMICFOCUSAPPLICATIONS HIGHVOLTAGESWITCHINGAPPLICATIONS HIGHVOLTAGEAMPLIFIERAPPLICATIONS HighVoltageVceo=1200V(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highbreakdownvoltage •Fastswitchingspeed •Wideareaofsafeoperation APPLICATIONS •Forswitchingregulatorapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highbreakdownvoltage •Fastswitchingspeed •Wideareaofsafeoperation APPLICATIONS •Forswitchingregulatorapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highbreakdownvoltage •Fastswitchingspeed •Wideareaofsafeoperation APPLICATIONS •Forswitchingregulatorapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Complementtotype2SA1803 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SA1803 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATION

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementaryto2SA1804 ·Recommendfor55Whighfidelityaudiofrequencyamplifier APPLICATIONS ·Poweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

NPNTRIPLE(DIFFUSEDTYPEPOWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Complementaryto2SA1804 •Suitableforusein55-Whighfidelityaudioamplifier’soutputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Complementaryto2SA1804 ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage APPLICATIONS ·Poweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementaryto2SA1804 ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage APPLICATIONS ·Poweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:121.83 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:121.83 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)StrobeFlashApplications

文件:115.51 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 15V 3A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 15V 3A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SiliconNPNEpitaxialType(PCTProcess)StrobeFlashApplications

文件:115.51 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:162.87 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:162.87 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:131.26 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件:131.26 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:137.87 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:155.95 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:155.95 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:159.37 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:128.83 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistor

文件:128.85 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:128.83 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:128.83 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

PowerAmplifierApplications

文件:125.71 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:161.66 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

文件:128.72 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerAmplifierApplications

文件:125.71 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:116.42 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:116.42 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

2SC468产品属性

  • 类型

    描述

  • 型号

    2SC468

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

更新时间:2025-7-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
18
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
22+
SOT-252
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
25+
30V3A0.9W
880000
明嘉莱只做原装正品现货
TOSHIBA
14+
DPAK
1
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
25+23+
TO-126F
37920
绝对原装正品全新进口深圳现货
2017+
to251
28562
只做原装正品假一赔十!
TOSHIBA
24+
TO-92L
15686
TOSHIBA/东芝
22+
TO-126F
31995
原装正品现货
TOS
TO-92L
8553
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA/东芝
2447
SOT-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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