Power Transistor (400V, 0.1A)

Features 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC/ IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA. 4) Complements the 2SC4505 and the 2SA1759.

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Solid state relay ·General purpose power amplifiers

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

Features • High speed switching • Low saturation voltage • High reliability APPLICATIONS • Switching regulators • DC-DC convertor • Solid state relay • General purpose power amplifiers

Very High-Definition CRT Display, Video Output Applications????

Very High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz (typ). • High breakdown voltage : VCEO≥250V(min). • High current. • Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). • Complementary pair

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. APPLICATION RF power amplifiers in 800-900MHz band range, especially suitable for radio applications.

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 ■ Features • High transition frequency fT • SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 ■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

For High-Frequency Amplification

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

NPN High-frequency Transistor

FEATURES ● Optimum for RF amplification of FM/AM radios. ● High requency voltage fT. ● SS-Mini type package,allowing downsizing of The equipment and automatic insertion through the type. SOT-523 APPLICATIONS ● General purpose switching and amplification.

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High frequency voltage fT • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

For High-Frequency Amplification

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN Planar

Silicon NPN Planar Application High frequency amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

High-Coltage Switching Transistor

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BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

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封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 20V 250MHZ SSMINI3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT） 描述：RF TRANS NPN 20V 650MHZ SSMINI3 分立半导体产品 晶体管 - 双极（BJT）- 射频