SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose

SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) • Complement to Type 2SA1757 APPLICATIONS • Designed for high speed and power switching applications

Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) • Complement to Type 2SA1757 APPLICATIONS • Designed for high speed and power switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For high speed power switching and DC-DC converter applications

Silicon NPN Power Transistors

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