Silicon NPN Epitaxial

Application High frequency amplifier, mixer

Low Level and General Purpose Amplifiers

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NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1735

Power Switching Applications

Features ■ Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 500mA) ■ High Speed Switching Time: tstg = 0.4ìs(typ.) ■ Small Flat Package ■ PC = 1 to 2W (mounted on ceramic substrate) ■ Complementary to 2SA1735

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.) • Small flat package • PC= 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) ● High Speed Switching Time: tstg = 0.5μs(typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SA1736

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.

2SC4542

Silicon NPN Power Transistor

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage APPLICATIONS ·Horizontal deflection output for high resolution display ·High speed switching regulator output applications

Silicon NPN epitaxial planer type(For video amplifier)

Silicon NPN epitaxial planer type For video amplifier ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● Wide current range.

Silicon NPN Epitaxial Planar Type

Features ● High transition frequency fT ● Small collector output capacitance cob ● Wide current range.

NPN TRIPLE DIFFUSE TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DIRVER, CHROMA OUTPUT APPLICATIONS)

High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High voltage: V (BR) CEO = 300 V • Small collector output capacitance: Cob = 3.0 pF (typ.) • Collector metal (fin) is fully covered with mold resin.

Silicon NPN Power Transistors

DESCRIPTION * With TO-220F package * High Voltage APPLICATIONS * Color TV horizontal driver applications * Color TV chroma output applications

TO-220-3L Plastic-Encapsulate Transistors

FEATURES High voltage: V (BR) CEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin.

For Medium Output Power Amplification

For medium output power amplification ■Features •Allowing supply with the radial taping

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator, Lighting Inverter and General Purpose)

High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator, lighting inverter and general purpose applications.

Driver Applications

NPN Planar Silicon Darlington Transistor 85V/3A Driver Applications Features · High DC current gain. · Large current capacity and Wide ASO. · Contains Zener diode of 95±10V between collector and base. · Uniformity in collector-to-base voltage due to adoption of accurate impurit

High-Voltage Driver Applications

High-Voltage Driver Applications Features • High breakdown votlage. • Adoption of MBIT process. • Excellent hFE linearlity

HIGH VOLTAGE DRIVER APPLICATION

HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity.

TRANSISTOR(NPN)

FEATURES Small Flat Package High Breakdown Voltage Excellent hFE Linearity

High-Voltage Driver Applications

Features ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearlity.

NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR P/b Lead(Pb)-Free

NPN Plastic Encapsulated Transistor

FEATURES Small Flat Package High Breakdown Voltage Excellent hFE Linearity

NPN Epitaxial Planar Silicon Transistor

FEATURES High breakdown voltage. Adoption of MBIT process. Excellent hFE linearlity.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Epitaxial Planar Silicon Transistor

FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearlity.

High Breakdown Voltage Adoption of MBIT Process

● Features High Breakdown Voltage Adoption of MBIT Process ● Excellent hFE linearlity.

Plastic-Encapsulate Transistors

FEATURES • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearlity.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent hFE Linearity

High Breakdown Voltage Adoption of MBIT Process

● Features High Breakdown Voltage Adoption of MBIT Process ● Excellent hFE linearlity.

NPN Epitaxial Planar Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Small Flat Package • Low collector-to-emitter saturation voltage. • Fast switching speed. • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates

High Breakdown Voltage Adoption of MBIT Process

● Features High Breakdown Voltage Adoption of MBIT Process ● Excellent hFE linearlity.

NPN Epitaxial Planar Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Small Flat Package • Low collector-to-emitter saturation voltage. • Fast switching speed. • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 3A, IB= 0.15A) APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuat

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·Suited for use in drivers such as DC-DC converters and actuators

Power Amplifier Applications Power Switching Applications

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Power Amplifier Applications Power Switching Applications

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Power Amplifier Applications Power Switching Applications

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Power Amplifier Applications Power Switching Applications

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Silicon NPN Power Transistors

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COLOR TELEVISION N1PS Chassis

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COLOR TELEVISION

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COLOUR TELEVISION C9PJ Chassis

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isc Silicon NPN Power Transistor

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Silicon NPN transistor in a TO-220F Plastic Package.

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Silicon NPN Power Transistor

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Silicon NPN Power Transistors

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TO-220 Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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Silicon NPN Triple Diffuse Type (PCT Process)

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Silicon NPN Triple Diffuse Type (PCT Process)

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Silicon NPN Power Transistor

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Silicon NPN Triple Diffused Planar Transistor

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Silicon NPN Triple Diffused Planar Transistor

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TRANSISTOR

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HIGH VOLTAGE DRIVER APPLICATION

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HIGH VOLTAGE DRIVER APPLICATION

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HIGH VOLTAGE DRIVER APPLICATION

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