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2SC448晶体管资料
2SC448别名:2SC448三极管、2SC448晶体管、2SC448晶体三极管
2SC448生产厂家:日本三菱公司
2SC448制作材料:Si-NPN
2SC448性质:射频/高频放大 (HF)_功率放大 (L)
2SC448封装形式:特殊封装
2SC448极限工作电压:100V
2SC448最大电流允许值:2A
2SC448最大工作频率:190MHZ
2SC448引脚数:3
2SC448最大耗散功率:25W
2SC448放大倍数:
2SC448图片代号:F-28
2SC448vtest:100
2SC448htest:190000000
- 2SC448atest:2
2SC448wtest:25
2SC448代换 2SC448用什么型号代替:3DK104E,
2SC448价格
参考价格:¥1.2079
型号:2SC4487S-AN 品牌:ON Semiconductor 备注:这里有2SC448多少钱,2025年最近7天走势,今日出价,今日竞价,2SC448批发/采购报价,2SC448行情走势销售排行榜,2SC448报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Frequency General-Purpose Amp, General Driver Applications???????????? Low-Frequency General-Purpose Amplifier, General Driver Applications Features · Large current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. | SANYO 三洋 | |||
Low-Frequency General-Purpose Amp Applications???? Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector-to-emitter saturation voltage. Applications • AF power amplifier, medium-speed switching, small-sized motor driver applications. | SANYO 三洋 | |||
High-Current Switching Applications High-Current Switching Applications Features • Low saturation voltage. • Large current capacity. • Fast switching speed. | SANYO 三洋 | |||
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP Features • Low saturation voltage • Large current capacity • High-speed switching | ONSEMI 安森美半导体 | |||
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP Features • Low saturation voltage • Large current capacity • High-speed switching | ONSEMI 安森美半导体 | |||
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP Features • Low saturation voltage • Large current capacity • High-speed switching | ONSEMI 安森美半导体 | |||
Low-Frequency Amp, Electronic Governor Applications?????? Low-Frequency Amplifier, Electronic Governor Applications Features • Low collector-to-emitter saturation voltage. | SANYO 三洋 | |||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | |||
High-Current Driver Applications? High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | |||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | |||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | |||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | |||
Low-Frequency Power Amp Applications Low-Frequency Power Amplifier Applications Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | SANYO 三洋 | |||
High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | SANYO 三洋 | |||
High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed | SANYO 三洋 | |||
High-Voltage Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | SANYO 三洋 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | SANYO 三洋 | |||
Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | |||
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications | ONSEMI 安森美半导体 | |||
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP | ONSEMI 安森美半导体 | |||
封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 20V 5A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
NPN Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications | ONSEMI 安森美半导体 | |||
封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 2A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
High-Current Switching Applications 文件:534.72 Kbytes Page:8 Pages | SANYO 三洋 | |||
Bipolar Transistor 文件:623.86 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:623.86 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
High-Voltage Switching Applications 文件:74.37 Kbytes Page:5 Pages | SANYO 三洋 | |||
High-Voltage Switching Applications 文件:534.23 Kbytes Page:8 Pages | SANYO 三洋 | |||
Bipolar Transistor 文件:632.53 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:632.53 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
High-Voltage Switching Applications 文件:534.05 Kbytes Page:7 Pages | SANYO 三洋 | |||
Bipolar Transistor 文件:623.82 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:623.82 Kbytes Page:7 Pages | ONSEMI 安森美半导体 |
2SC448产品属性
- 类型
描述
- 型号
2SC448
- 功能描述
两极晶体管 - BJT BIP NPN 5A 20V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
22+ |
TO92L |
100000 |
代理渠道/只做原装/可含税 |
|||
ONSEMI |
两年内 |
N/A |
145000 |
原装现货,实单价格可谈 |
|||
SANYO/三洋 |
24+ |
NA/ |
25750 |
原装现货,当天可交货,原型号开票 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
SANYO |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SANYO/三洋 |
25+ |
TO-92L |
9800 |
全新原装现货,假一赔十 |
|||
SANYO |
23+ |
NA |
111 |
专做原装正品,假一罚百! |
|||
SANYO |
24+ |
TO-92LM |
30000 |
||||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
|||
ONN |
2526+ |
原厂封装 |
1310 |
只做原装优势现货库存 渠道可追溯 |
2SC448芯片相关品牌
2SC448规格书下载地址
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2SC448数据表相关新闻
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DdatasheetPDF页码索引
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