2SC442晶体管资料

  • 2SC442别名:2SC442三极管、2SC442晶体管、2SC442晶体三极管

  • 2SC442生产厂家:日本三菱公司

  • 2SC442制作材料:Si-NPN

  • 2SC442性质:射频/高频放大 (HF)

  • 2SC442封装形式:直插封装

  • 2SC442极限工作电压:50V

  • 2SC442最大电流允许值:0.1A

  • 2SC442最大工作频率:420MHZ

  • 2SC442引脚数:3

  • 2SC442最大耗散功率:0.5W

  • 2SC442放大倍数

  • 2SC442图片代号:D-9

  • 2SC442vtest:50

  • 2SC442htest:420000000

  • 2SC442atest:0.1

  • 2SC442wtest:0.5

  • 2SC442代换 2SC442用什么型号代替:BFR97,BFR98,BFS23,BFX33,BFX55,2N3299,2N3300,2N3724,2N3866,2SC1385,3DG122B,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which ca

Panasonic

松下

Silicon NPN Triple Diffused Planar Type

[Panasonic] Silicon NPN Triple-Diffused Planar Type High Breakdwon Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of DC current gain (hFE) ● Full Pack package for simplified mountin

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Epitaxial

Application VHF / UHF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed • Wide area of safe operation APPLICATIONS • For switching regulator applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

400V/12A Switching Regulator Applications

400V/12A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

SANYO

三洋

Switching Regulator Applications

400V/16A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. APPLICATIONS • Switching regulator applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. APPLICATIONS • Switching regulator applications

SAVANTIC

Switching Regulator Applications

400V/25A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications.

ISC

无锡固电

Switching Regulator Applications

800V/3A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting.

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications

ISC

无锡固电

Switching Regulator Applications

800V/4.5A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Switching Regulator Applications

800V/6A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·Switching regulator applications

SAVANTIC

Switching Regulator Applications

800V/8A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf: 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting.

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications

ISC

无锡固电

封装/外壳:TOP-3F 包装:散装 描述:TRANS NPN 800V 3A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic

松下

Silicon NPN Power Transistors

文件:224.14 Kbytes Page:4 Pages

SAVANTIC

NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications

ONSEMI

安森美半导体

NPN Triple Diffused Planar Silicon Transistor 400V/16A Switching Regulator Applications

ONSEMI

安森美半导体

Silicon NPN Power Transistor

文件:134.65 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:224.77 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:135.86 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Triple Diffused Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor

ONSEMI

安森美半导体

Silicon NPN Power Transistor

文件:132.41 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:231.65 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:133.07 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistor

文件:135.22 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:223.01 Kbytes Page:4 Pages

SAVANTIC

2SC442产品属性

  • 类型

    描述

  • 型号

    2SC442

  • 功能描述

    TRANS NPN 800VCEO 3A TOP-3F

  • RoHS

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    -

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)(最大)

    1A 电压 -

  • 集电极发射极击穿(最大)

    30V

  • Ib、Ic条件下的Vce饱和度(最大)

    200mV @ 100mA,1A 电流 -

  • 集电极截止(最大)

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA,5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3,SC-59,SOT-23-3

  • 供应商设备封装

    SOT-23-3(TO-236)

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

更新时间:2025-12-25 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
TO-3PML
10000
全新
SANYO
23+24
TO-3P
28950
原装现货.优势热卖.终端BOM表可配单
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
SANYO
96+
TO3P
110
原装现货海量库存欢迎咨询
SANYO/三洋
TO-3PF
22+
6000
十年配单,只做原装
SANYO
24+
TO-3P
36520
原装现货/放心购买
SAY
16+
TO-3P
10000
全新原装现货
SANYO
1922+
TO3P
8900
公司原装现货特价长期供货欢迎来电咨询
SANYO
25+23+
TO-3P
37517
绝对原装正品全新进口深圳现货
ST/意法
23+
SOT23
50000
全新原装正品现货,支持订货

2SC442数据表相关新闻