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2SC442晶体管资料
2SC442别名:2SC442三极管、2SC442晶体管、2SC442晶体三极管
2SC442生产厂家:日本三菱公司
2SC442制作材料:Si-NPN
2SC442性质:射频/高频放大 (HF)
2SC442封装形式:直插封装
2SC442极限工作电压:50V
2SC442最大电流允许值:0.1A
2SC442最大工作频率:420MHZ
2SC442引脚数:3
2SC442最大耗散功率:0.5W
2SC442放大倍数:
2SC442图片代号:D-9
2SC442vtest:50
2SC442htest:420000000
- 2SC442atest:0.1
2SC442wtest:0.5
2SC442代换 2SC442用什么型号代替:BFR97,BFR98,BFS23,BFX33,BFX55,2N3299,2N3300,2N3724,2N3866,2SC1385,3DG122B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which ca | Panasonic 松下 | |||
Silicon NPN Triple Diffused Planar Type [Panasonic] Silicon NPN Triple-Diffused Planar Type High Breakdwon Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of DC current gain (hFE) ● Full Pack package for simplified mountin | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Epitaxial Application VHF / UHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed • Wide area of safe operation APPLICATIONS • For switching regulator applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
400V/12A Switching Regulator Applications 400V/12A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Switching Regulator Applications 400V/16A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. APPLICATIONS • Switching regulator applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. APPLICATIONS • Switching regulator applications | SAVANTIC | |||
Switching Regulator Applications 400V/25A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications. | ISC 无锡固电 | |||
Switching Regulator Applications 800V/3A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications | ISC 无锡固电 | |||
Switching Regulator Applications 800V/4.5A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications | SAVANTIC | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Switching Regulator Applications 800V/6A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·Switching regulator applications | SAVANTIC | |||
Switching Regulator Applications 800V/8A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf: 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | ISC 无锡固电 | |||
封装/外壳:TOP-3F 包装:散装 描述:TRANS NPN 800V 3A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic 松下 | |||
Silicon NPN Power Transistors 文件:224.14 Kbytes Page:4 Pages | SAVANTIC | |||
NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications | ONSEMI 安森美半导体 | |||
NPN Triple Diffused Planar Silicon Transistor 400V/16A Switching Regulator Applications | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistor 文件:134.65 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:224.77 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon NPN Power Transistor 文件:135.86 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN Triple Diffused Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistor 文件:132.41 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:231.65 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon NPN Power Transistor 文件:133.07 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistor 文件:135.22 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:223.01 Kbytes Page:4 Pages | SAVANTIC |
2SC442产品属性
- 类型
描述
- 型号
2SC442
- 功能描述
TRANS NPN 800VCEO 3A TOP-3F
- RoHS
是
- 类别
分离式半导体产品 >> 晶体管(BJT) - 单路
- 系列
-
- 标准包装
1
- 系列
-
- 晶体管类型
NPN 电流 -
- 集电极(Ic)(最大)
1A 电压 -
- 集电极发射极击穿(最大)
30V
- Ib、Ic条件下的Vce饱和度(最大)
200mV @ 100mA,1A 电流 -
- 集电极截止(最大)
100nA 在某 Ic、Vce
- 时的最小直流电流增益(hFE)
300 @ 500mA,5V 功率 -
- 最大
710mW 频率 -
- 转换
100MHz
- 安装类型
表面贴装
- 封装/外壳
TO-236-3,SC-59,SOT-23-3
- 供应商设备封装
SOT-23-3(TO-236)
- 包装
Digi-Reel®
- 其它名称
MMBT489LT1GOSDKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PML |
10000 |
全新 |
||||
SANYO |
23+24 |
TO-3P |
28950 |
原装现货.优势热卖.终端BOM表可配单 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SANYO |
96+ |
TO3P |
110 |
原装现货海量库存欢迎咨询 |
|||
SANYO/三洋 |
TO-3PF |
22+ |
6000 |
十年配单,只做原装 |
|||
SANYO |
24+ |
TO-3P |
36520 |
原装现货/放心购买 |
|||
SAY |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
SANYO |
1922+ |
TO3P |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
SANYO |
25+23+ |
TO-3P |
37517 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
2SC442芯片相关品牌
2SC442规格书下载地址
2SC442参数引脚图相关
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2SC442数据表相关新闻
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
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DdatasheetPDF页码索引
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