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2SC44晶体管资料
2SC44别名:2SC44三极管、2SC44晶体管、2SC44晶体三极管
2SC44生产厂家:日本索尼公司
2SC44制作材料:Si-NPN
2SC44性质:开关管 (S)_功率放大 (L)
2SC44封装形式:直插封装
2SC44极限工作电压:50V
2SC44最大电流允许值:5A
2SC44最大工作频率:20MHZ
2SC44引脚数:2
2SC44最大耗散功率:50W
2SC44放大倍数:β>4
2SC44图片代号:E-44
2SC44vtest:50
2SC44htest:20000000
- 2SC44atest:5
2SC44wtest:50
2SC44代换 2SC44用什么型号代替:BD130,BD245,BDV91,BDX10,BDX91,BDY20,BDY39,2N4914,3DK108E,
2SC44价格
参考价格:¥2.8296
型号:2SC441000L 品牌:Panasonic 备注:这里有2SC44多少钱,2025年最近7天走势,今日出价,今日竞价,2SC44批发/采购报价,2SC44行情走势销售排行榜,2SC44报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Frequency General-Purpose Amp Applications???????????? High-Frequency General-Purpose Amplifier Applications Features · High power gain. · High cutoff frequency. · Small Cob, Cre. · Very small-sized package permitting the 2SC4400 applied sets to be made small and slim. | SANYO 三洋 | |||
VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications Applications · VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. Features · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA) · Very small-sized package permitting 2SC4401 applied sets to be made smaller and | SANYO 三洋 | |||
VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications? Applications · VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. Features · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) · Very small-sized package permitting 2SC4402 applied sets to be made smaller and | SANYO 三洋 | |||
VHF/UHF Local Oscillator Applications? Applications · VHF/UHF oscillators. Features · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ (f=0.9GHz) · Small noise figure : NF=2.5dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4403 applied sets to be made smaller and slimmer. | SANYO 三洋 | |||
UHF Local Oscillator, Wide-Band Amplifier Applications??????? Applications · UHF Local Oscillator, Wide-Band Amplifier Features · High cutoff frequency : fT=5.0GHz typ · High power gain : MAG=14dB typ (f=0.9GHz) · Small noise figure : NF=2.2dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4404 applied sets to be made smaller | SANYO 三洋 | |||
UHF Low-Noise, Wide-Band Amplifier Applications??????? Applications · UHF, low-noise amplifiers, wide-band amplifiers. Features · High cutoff frequency : fT=5.0GHz typ · High power gain : MAG=14dB typ (f=0.9GHz) · Small noise figure : NF=1.5dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4405 applied sets to be made smal | SANYO 三洋 | |||
VHF Frequency Mixer, Local Oscillator Applications Applications · VHF mixer, frequency converters, local oscillators. Features · High cutoff frequency : fT=1.2GHz typ · High power gain : PG=15dB typ (f=0.4GHz) · Good dependence of fTon current. · Very small-sized package permitting 2SC4406 applied sets to be made smaller and sl | SANYO 三洋 | |||
VHF/UHF Mixer, Local Oscillator Applications??? VHF/UHF mixer, local oscillator application Features · High cutoff frequency : fT=3.0GHz typ · High power gain : PG=12dB typ (f=0.9GHz) · Small noise figure : NF=3.0dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4407 applied sets to be made smaller and slimmer. Appl | SANYO 三洋 | |||
VHF/UHF Mixer, Local Oscillator Applications Features · High cutoff frequency : fT=3.0GHz typ · High power gain : PG=12dB typ (f=0.9GHz) · Small noise figure : NF=3.0dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4407- applied sets to be made smaller and slimmer. Applications · VHF/UHF mixers, frequency converters, | SANYO 三洋 | |||
VHF/UHF Mixer, Local Oscillator Applications Features · High cutoff frequency : fT=3.0GHz typ · High power gain : PG=12dB typ (f=0.9GHz) · Small noise figure : NF=3.0dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4407- applied sets to be made smaller and slimmer. Applications · VHF/UHF mixers, frequency converters, | SANYO 三洋 | |||
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 500 ns (typ.) • Complementary to 2SA1680 | TOSHIBA 东芝 | |||
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power switching applications • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681 | TOSHIBA 东芝 | |||
Power Switching Applications Features ● Low Collector Saturation Voltage: VCE(sat) = 0.5V(max)(IC = 1A) ● High Speed Switching Time: tstg = 500ns(typ.) ● Small Flat Package ● PC = 1.0 to 2.0W (mounted on a ceramic substrate) ● Complementary to 2SA1681 | KEXIN 科信电子 | |||
Silicon NPN epitaxial planer type(For UHF amplification) Silicon NPN epitaxial planer type For UHF amplification ■ Features ● Allowing the small current and low voltage operation. ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magaz | Panasonic 松下 | |||
Very High-Definition CRT Display Video Output Applications??? Ultrahigh-Definition CRT Display Video Output Applications Features · High fT(fT=1.2GHz typ). · High breakdown voltage (VCBO=100V, VCEO=80V). · Large current (IC=500mA). · Small reverse transfer capacitance (Cre =3.8pF/ VCB=30V). · Adoption of FBET process. Applications | SANYO 三洋 | |||
TV camera Deflection, High-Voltage Driver Applications TV Camera Deflection High-Voltage Driver Applications Features • High breakdown voltage(VCEO≥300V). • Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). • Excellent DC current gain ratio(hFE ratio : 0.95 typ). • Adoption of FBET process. | SANYO 三洋 | |||
NPN Triple Diffused Planar Silicon Transistor Features ● High breakdown voltage. ● Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). ● Excellent DC current gain ratio(hFE ratio : 0.95 typ). | KEXIN 科信电子 | |||
NPN Epitaxial Planar Silicon Transistor Features ● Adoption of FBET process. ● High DC current gain. ● Low collector-to-emitter saturation voltage. ● High VEBO. ● Small Cob. | KEXIN 科信电子 | |||
Low-Frequency General-Purpose Amp Applications?????????? Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting the 2SC4413-applied sets to be made small and slim. • Adoption of FBET process. • High DC current gain. • Low collector-to-emitter saturation voltage. • High VEBO. • Small Cob. | SANYO 三洋 | |||
High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications? High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications | SANYO 三洋 | |||
Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image) Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image ■Features •High transition frequency fT •Satisfactory linearity of forward current transfer ratio hFE •S-Mini type package, allowing downsizing of the equipment and automatic insertion through t | Panasonic 松下 | |||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) High Voltage and High Speed Switchihg Transistor Application : Switching Regulator and General Purpose | Sanken 三垦 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High reliability • High voltage ,high speed switching APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High reliability • High voltage ,high speed switching APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | ISC 无锡固电 | |||
HIGH VOLTAGE, HIGH SPEED SWITCHING Features • High voltage ,high speed switching • High reliability Applications • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which ca | Panasonic 松下 | |||
Silicon NPN Triple Diffused Planar Type [Panasonic] Silicon NPN Triple-Diffused Planar Type High Breakdwon Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of DC current gain (hFE) ● Full Pack package for simplified mountin | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Epitaxial Application VHF / UHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
400V/12A Switching Regulator Applications 400V/12A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed • Wide area of safe operation APPLICATIONS • For switching regulator applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. APPLICATIONS • Switching regulator applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. APPLICATIONS • Switching regulator applications | SAVANTIC | |||
Switching Regulator Applications 400V/16A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications. | ISC 无锡固电 | |||
Switching Regulator Applications 400V/25A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications | ISC 无锡固电 | |||
Switching Regulator Applications 800V/3A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications | SAVANTIC | |||
Switching Regulator Applications 800V/4.5A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Switching Regulator Applications 800V/6A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CEO= 800V(Min) • Fast Switching speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator Applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·Switching regulator applications | SAVANTIC | |||
Switching Regulator Applications 800V/8A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf: 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Switching Regulator Applications 800V/12A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting. | SANYO 三洋 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed. • Wide area of safe operation APPLICATIONS • Switching regulator applications | ISC 无锡固电 | |||
High-Frequency General-Purpose High-Frequency General-Purpose Amplifier Applications Features • High power gain. • High cutoff frequency. • Small Cob, Cre. • Ultrasmall-sized package permitting the 2SC4432-applied sets to be made small and slim. | SANYO 三洋 | |||
HF Amp Applications HF Amplifier Applications Features • High power gain : PG=28dB typ (f=100MHz). • High cutoff frequency : fT=750MHz typ. • Small Cob, Cre. | SANYO 三洋 | |||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator, Lighting Inverter, and General Purpose) High Voltage and High Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter, and General Purpose | Sanken 三垦 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator, lighting inverter, and general purpose applications. | ISC 无锡固电 | |||
Very High-Definition Color Display Horizontal Deflection Output Applications?????? Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features • Fast switching speed (tf=300ns max). • High brocking voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. | SANYO 三洋 |
2SC44产品属性
- 类型
描述
- 型号
2SC44
- 制造商
SANYO Semiconductor Co Ltd
- 功能描述
TRANS NPN 18V 0.05A SOT323
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Panasonic |
2023+ |
SOT323 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
Panasonic |
26+ |
SOT323 |
12000 |
原装,正品 |
|||
PAN |
24+ |
NA/ |
2950 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Panasonic |
23+ |
SOT323 |
5400 |
原厂原装正品 |
|||
PANASONIC |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Panasonic |
24+ |
SOT323 |
5000 |
全新原装正品,现货销售 |
|||
Panasonic-SSG |
24+ |
S-Mini3P |
6000 |
||||
Panasonic |
25+ |
SOT323 |
8000 |
只有原装 |
|||
Panasonic Electronic Component |
25+ |
SC-70 SOT-323 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
2SC44芯片相关品牌
2SC44规格书下载地址
2SC44参数引脚图相关
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2SC44数据表相关新闻
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2023-2-152SC380TM-O
只做原装假一赔十
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
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