High-hFE, AF Amp Applications

High-hFE, AF Amplifier Applications Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).

NPN Epitaxial Planar Silicon Transistor

Features ● Adoption of MBIT process. ● High DC current gain (hFE=800 to 3200). ● Large current capacity (IC=2A). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.3V). ● High VEBO (VEBO ≥ 15V).

Silicon PNP epitaxial planer type

■ Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Allowing supply with the radial taping.

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Allowing supply with the radial taping.

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise Figure. ● NF = 1.5dB, |S21e|2=16dB (f=500MHz) ● NF = 1.7dB, |S21e|2=10.5dB (f=1000MHz)

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high cain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

High-Frequency General-Purpose Amp Applications??????????

High-Frequency General-Purpose Amp Applications

NPN Epitaxial Planar Silicon Transistor

Features ● High power gain : PG=25dB typ (f=100MHz). ● applied sets to be made small and slim.

High-Frequency General-Purpose Amplifier Applications

Features • High power gain : PG=25dB typ (f=100MHz). • Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim.

High-Frequency General-Purpose Amplifier Applications

Features • High power gain : PG=25dB typ (f=100MHz). • Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim.

High-Frequency General-Purpose Amplifier Applications

Features • High power gain : PG=25dB typ (f=100MHz). • Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim.

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

High-Frequency General-Purpose Amplifier Applications