Silicon NPN Epitaxial

Features ● High emitter-base voltage: VEBO = 25 V (min). ● High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). ● Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). ● High DC current gain: hFE = 200 1200. ● Small package.

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

文件：507.9 Kbytes Page：5 Pages

For Muting and Switching Applications

文件：281.26 Kbytes Page：5 Pages

For Muting and Switching Applications

文件：281.26 Kbytes Page：5 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 0.3A USM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个