HIGH POWER SWITCHING APPLICATIONS.

FEATURES : High Voltage: VCEO 400V (Min.)(2SC2204) VCEO=300V (Min.) (2SC2220) VCBO-800V (Min.)(2SC2204) VCBO=500V (Min.)(2SC2220) High Speed Switching : tf=0.7us (Typ.)

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circ

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SA963 • High collector power dissipation APPLICATIONS • For low-frequency power amplification

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • High Collector Power Dissipation • Complement to Type 2SA963 APPLICATIONS • Designed for low frequency power amplification.

For low-frequency power amplification

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 ■ Features • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with 2SA0963

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • High Collector Power Dissipation • Complement to Type 2SA963 APPLICATIONS • Designed for low frequency power amplification.

Trans GP BJT NPN 400V 7A 2-Pin(2+Tab) TO-66

SILICON NPN TRIPLE DIFFUSED TYPE

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Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others

Silicon NPN Power Transistors

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