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2SC207晶体管资料

  • 2SC207别名:2SC207三极管、2SC207晶体管、2SC207晶体三极管

  • 2SC207生产厂家:日本富士通公司

  • 2SC207制作材料:Si-NPN

  • 2SC207性质:甚高频 (VHF)

  • 2SC207封装形式:直插封装

  • 2SC207极限工作电压:20V

  • 2SC207最大电流允许值:0.025A

  • 2SC207最大工作频率:800MHZ

  • 2SC207引脚数:3

  • 2SC207最大耗散功率:0.2W

  • 2SC207放大倍数

  • 2SC207图片代号:D-13

  • 2SC207vtest:20

  • 2SC207htest:800000000

  • 2SC207atest:0.025

  • 2SC207wtest:0.2

  • 2SC207代换 2SC207用什么型号代替:BF155,BF161,BF180,BF357,BF377,BF378,BF689,BF763,2N2857,3DG112C,

型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2SC2073;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Wide safe Operating Area. Complementary to 2SA940

DGNJDZ

南晶电子

PNP Silicon Epitaxial Power Transistor

FEATURES ● Complements the 2SC2073. APPLICATIONS ● Power Amplifier Applications. ● Vertical Output Applications.

THINKISEMI

思祁半导体

NPN SILICON POWER TRANSISTOR

DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc. The UTC 2SC2073 is suitable for general purpose Power amplifier, vertical output application. FEATURES * High collector base v

UTC

友顺

POWER TRANSISTORS(1.5A,150V,25W)

1.5 AMPERE POWER TRANSISTOR 150 VOLTS 25 WATTS

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-:V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications. ·Vertical output applications.

ISC

无锡固电

NPN Silicon Epitaxial Power Transistor

FEATURES ● Complements the 2SA940. ● Wide Safe Operationg Area. ● Fast Switching Speed. ● Wide ASO.

THINKISEMI

思祁半导体

Bipolar Transistor

The UTC 2SC2073 is an NPN silicon power transistors, it usesUTC’s advanced technology to provide customers with high collectorbase voltage, etc.The UTC 2SC2073 is suitable for general purpose Poweramplifier, vertical output application.

UTC

友顺

Silicon NPN transistor in a TO-220F Plastic Package.

Description Silicon NPN transistor in a TO-220F Plastic Package. Features Wide Safe Operating Area, complementary to 2SA940A. Applications Power amplifier applications, vertical output applications.

FOSHAN

蓝箭电子

TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS)

POWER AMPLIFIER APPLICATION VERTICAL OUT APPLICATION ● Wide Safe Operating Area. ● Complementary to 2SA940A

TOSHIBA

东芝

SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·High transition frequency ·Wide area of safe operation APPLICATIONS ·27MHz power amplifier applications ·Recommended for output stage application of AM 4W transmitter

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High transition frequency • Wide area of safe operation APPLICATIONS • 27MHz power amplifier applications • Recommended for output stage application of AM 4W transmitter

SAVANTIC

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar RF Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistor

DESCRIPTION • Collector-EmitterVoltage- :VCER= 75V(Min) ;RBe=150Q • Collector Current- :lc=3A APPLICATIONS • 27MHz RF Power AmplifierApplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications

SAVANTIC

27MHz RF Power Amp Applications

27MHz RF Power Amplifier Applications

SANYO

三洋

27MHz RF Power Amplifier Applications

27MHz RF Power Amplifier Applications

TGS

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Voltage-:VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 75V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.6V(Max) @IC=1A APPLICATIONS · 27MHz RF Power Amplifier Applications

ISC

无锡固电

150V,1.5A,Medium Power NPN Bipolar Transistor

GALAXY

银河微电

中等功率双极型晶体管

MCC

Silicon NPN Power Transistors

文件:130.699 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN transistor in a TO-220 Plastic Package.

文件:1.15286 Mbytes Page:6 Pages

FOSHAN

蓝箭电子

NPN Silicon Power Transistors

文件:769.31 Kbytes Page:2 Pages

MCC

Plastic-Encapsulated Transistors

文件:59.37 Kbytes Page:1 Pages

TEL

NPN Plastic-Encapsulate Transistors

文件:1.03443 Mbytes Page:7 Pages

JINGHENG

晶恒

NPN POWER 150V 1.5A TO-220

文件:153.26 Kbytes Page:3 Pages

SYC

TRANSISTOR (NPN)

文件:125.97 Kbytes Page:1 Pages

WINNERJOIN

永而佳

TO-220-3L Plastic-Encapsulate Transistors

文件:508.32 Kbytes Page:2 Pages

JIANGSU

长电科技

Silicon NPN Power Transistor

文件:124.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)

文件:156.31 Kbytes Page:3 Pages

TOSHIBA

东芝

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)

文件:156.31 Kbytes Page:3 Pages

TOSHIBA

东芝

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 150V 1.5A TO220AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Silicon NPN Epitaxial Type (PCT Process) Transistor

文件:237.59 Kbytes Page:4 Pages

ELEFLOW

Silicon NPN Power Transistors

文件:91.44 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:124.93 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Epitaxial Planar Silicon Transistor

文件:96.79 Kbytes Page:1 Pages

ELEFLOW

isc Silicon NPN Power Transistor

文件:308.93 Kbytes Page:2 Pages

ISC

无锡固电

27MHz RF Power Amplifier Applications

文件:78.31 Kbytes Page:3 Pages

SANYO

三洋

Silicon NPN Power Transistors

文件:104.08 Kbytes Page:3 Pages

SAVANTIC

27MHz RF Power Amplifier Applications

文件:78.31 Kbytes Page:3 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

文件:308.93 Kbytes Page:2 Pages

ISC

无锡固电

2SC207产品属性

  • 类型

    描述

  • PCM(W):

    1.5

  • IC(A):

    1.5

  • VCBO(V):

    150

  • VCEO(V):

    150

  • VEBO(V):

    5

  • hFEMin:

    40

  • hFEMax:

    140

  • hFE@VCE(V):

    10

  • hFE@IC(A):

    0.5

  • VCE(sat)(V):

    1.5

  • VCE(sat)\u001E@IC(A):

    0.5

  • VCE(sat)\u001E@IB(A):

    0.05

  • Package:

    TO-220-3L

更新时间:2026-5-15 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEC
2026+
TO220
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA/东芝
25+
TO-220
45000
TOSHIBA/东芝全新现货2SC2073即刻询购立享优惠#长期有排单订
FSC
24+
TO-220
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
SEC
24+
TO-220
9000
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA
TO220F
9500
一级代理 原装正品假一罚十价格优势长期供货
FAIRCHILD
21+
TO-220
1226
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查
FAIRCHILD/仙童
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
FAIRCHILD/仙童
24+
TO-220
55000
原装进口只做原装
FSC
13+
TO220
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
长电
25+
TO-220
28742
百分百原装正品 真实公司现货库存 本公司只做原装 可

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