NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2001 is designed for use in output state of portable RADIO and cassette type tape recorder, general purpose applications.

TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

NPN Plastic Encapsulated Transistor

FEATURES ● High hFE and low VCE(sat) hFE(IC=100mA)： 200(Typ) VCE(sat)(700mA)： 0.2V(Typ)

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃