NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

C1969, 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Power Gain-: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.

NPN Epitaxial Planar Type

C1969, 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

Silicon NPN Power Transistor

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10 to 14 watts output power class AB ampliflers applications in HF band.

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