2SC1728

2SC1728 / 2SC1760 Transistors

2~30MHz SSB LINEAR PWER AMPLIFIER APPLICATIONS.

FEATURES Specified 28v, 28MHz Characteristics -Output Power : Po=40WPEP -Minimum Gain : Gpe=16dB -Efficiency : =40(Min.) -Intermodulation Distortion : IMD=-30dB(Max.)

2~30MHz SSB LINEAR PWER AMPLIFIER APPLICATIONS.

FEATURES Specified 28v, 28MHz Characteristics -Output Power : Po=80WPEP -Minimum Gain : Gpe=14.5dB -Efficiency : =40(Min.) -Intermodulation Distortion : IMD=-30dB(Max.)

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES -Output Power : Po=2.8W(Min.) (f=470MHz, VCC=12.6V, PI=0.6W) -100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.6V, Pi=0.6W, f=470MHz

TRANSISTOR(NPN)

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

Plastic-Encapsulate Transistors

FEATURES • Small flat package. • Low saturation voltage VCE(sat)=-0.5V • High speed switching time • PC=1.0 to 2.0W

丝印代码：Q1766；NPN Epitaxial Transistor

FEATURES ● Small flat package. ● Low saturation voltage VCE(sat)=-0.5V ● High speed switching time ● PC=1.0 to 2.0W ● High saturation current capability APPLICATIONS ● Power amplifier

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Pb-Free package is available PoHS product for packing code suffix G Halogen free product for packing code suffix H ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

NPN Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power

Transistors

普通三极管

50V,2A,General Purpose NPN Bipolar Transistor