丝印代码：TP；Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC/ IB=150mA / 15mA.

Silicon NPN transistor in a SOT-23 Plastic Package

文件：801.49 Kbytes Page：6 Pages

三极管

Transistors > Small Signal Bipolar Transistors(up to 0.6W)

丝印代码：QR；Medium Power Transistor (50V,0.5A)

文件：97.34 Kbytes Page：3 Pages

Medium Power Transistor (50V,0.5A)

文件：97.34 Kbytes Page：3 Pages

封装/外壳：SC-72 成形引线 包装：卷带（TR）剪切带（CT） 描述：TRANS NPN 50V 0.5A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-72 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 50V 0.5A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High IC ● Low VCE(sat). Optimal for Low Voltage Operation ● Complements the 2SA854S

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for lowvoltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. Structure Epitaxial planar type NPN silicon transistor