丝印代码：2SC1674；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification.

TO-92 Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0. 25 W (Tamb=25℃) Collector current ICM: 0.02 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1674 is designed for use FM RF amplifier and local oscillator of FM tuner.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications.

NPN Plastic Encapsulated Transistor

FEATURES • General Purpose Switching and Amplification

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.