DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES ● High Voltage VCEO : 2SC1653 130 V, 2SC1654 160 V ● High DC Current Gain: hFE = 130 TYP. (VCE = 3.0 V, IC = 15 mA)

Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA). ● High voltage. APPLICATIONS ● Audio frequency general purpose amplifier applications.

TRANSISTOR(NPN)

FEATURES ● High Frequency Power Amplifier Application ● Power Swithing Applications

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Frequency Power Amplifier Application ● Power Swithing Applications

NPN Silicon Epitaxial Transistor

Features ● High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) ● High voltage VCEO : 160V

NPN Epitaxial Planar Transistor

FEATURE ● High Frequency Power Amplifier Application ● Power Switching Applications

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Frequency Power Amplifier Application Power Swithing Applications

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

晶体三极管

NPN小信号三极管

晶体管

Silicon Epitaxial Planar Transistor

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Japanese 2S Transistor Cross Reference

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Silicon Epitaxial Planar Transistor

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Silicon Epitaxial Planar Transistor

文件：268.69 Kbytes Page：4 Pages

Silicon Epitaxial Planar Transistor

文件：266.1 Kbytes Page：4 Pages

NPN Epitaxial Planar Transistor

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