Silicon NPN Transistor Final RF Power Output

Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage • Low collector saturation voltage APPLICATIONS • Color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage • Low collector saturation voltage APPLICATIONS • Color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV vertical deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV vertical deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • High breakdown voltage APPLICATIONS • Suitable for switching power supplies in TV sets

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • High breakdown voltage APPLICATIONS • Suitable for switching power supplies in TV sets

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720

NPN Plastic Encapsulated Transistor

0.5 A, 60 V NPN Plastic Encapsulated Transistor FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Complementary Pair with 2SA720

TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Complementary Pair with 2SA720

NPN Plastic Encapsulated Transistor

0.5 A, 80 V NPN Plastic Encapsulated Transistor FEATURES Collector output capacitance： Cob=11 pF (TYP), 20 pF (MAX)

Silicon NPN epitaxial planer type(For low-frequency driver amplification)

Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A (2SA720A) ■ Features ● High collector to emitter voltage VCEO. ● Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

TO-92 Plastic-Encapsulate Transistors

FEATURES Collector utput apacitance : Cob=11 pF (TYP),20 pF (MAX)

TO-92 Plastic-Encapsulate Transistors

FEATURES Collector utput apacitance : Cob=11 pF (TYP),20 pF (MAX)

TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Complementary Pair with 2SA720

NPN EPITAXIAL PLANAR TYPE

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·Designed for use in large screen color deflection circuits

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·Designed for use in large screen color deflection circuits

POWER TRANSISTORS(6.0A,1500V,80W)

HORIZONTAL DEFLECTION TRANSISTORS

POWER TRANSISTORS(6.0A,1500V,80W)

HORIZONTAL DEFLECTION TRANSISTORS

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar

LOW FREQUENCY LOW NOISE AMPLIFIER

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Silicon NPN Epitaxial Planar

Application • VHF amplifier, mixer • Local oscollator

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications

Silicon NPN Epitaxial

Low frequency low noise amplifier

Silicon NPN Epitaxial

Low frequency low noise amplifier

Silicon NPN Epitaxial

Low frequency low noise amplifier

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Si NPN Epitaxial Planar

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For TV horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For TV horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • Designed for use in large screen color deflection circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • Designed for use in large screen color deflection circuits

POWER TRANSISTORS(4.5A,1400V,50W)

Silicon NPN epitaxial planer type(For high-frequency amplification)

For high-frequency amplification Complementary to 2SA838 ■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Optimum for RF Amplification of FM/AM Radios. ● High Transition Frequency fT.

TO-92 Plastic-Encapsulate Transistors

FEATURES Optimum for RF Amplification of FM/AM Radios. High Transition Frequency fT.

NPN Plastic Encapsulated Transistor

FEATURES ● Optimum for RF Amplification of FM/AM Radios ● High Transition Frequency fT

TO-92 Plastic-Encapsulate Transistors

FEATURES Optimum for RF Amplification of FM/AM Radios. High Transition Frequency fT.

Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

For intermadiate frequency amplification of TV image ■ Features ● High transition frequency fT. ● Large collector power dissipation PC.

Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

For intermadiate frequency amplification of TV image ■ Features ● High transition frequency fT. ● Large collector power dissipation PC.

Silicon NPN Power Transistors

DESCRIPTION ··With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ··With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications

SILICON NPN EPITAXIAL PLANAR

SILICON NPN EPITAXIAL PLANAR ○ 27MHz, SSB, AM Transmitter Output Stage Application. • recommended for linear amplifiers in SSB Equipment • output power 9W (min.) at DC input power 15W ( f = 27MHz, VCC = 12V )

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage VCE(sat). ● Complementary Pair with 2SA0683 and 2SA0684.

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

* Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0683, 2SA0684 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage VCE(sat). ● Complementary Pair with 2SA0683 and 2SA0684.

Low Collector Saturation Voltage

DESCRIPTION • Low Collector Saturation Voltage • Complement to Type 2SA683 APPLICATIONS • Designed for low frequency power amplification and driver amplification.

TO-92L Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Low collector to emitter saturation voltage VCE(sat). ● Complementary pair with 2SA0683 and 2SA0684.

TO-92L Plastic-Encapsulate Transistors

FEATURES Low Collector to Emitter Saturation Voltage VCE(sat). Complementary Pair with 2SA0683 and 2SA0684.

NPN Silicon General Purpose Transistor

FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat). ● Complementary pair with 2SA0683 and 2SA0684.