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2SB99晶体管资料
2SB99别名：2SB99三极管、2SB99晶体管、2SB99晶体三极管
2SB99生产厂家：日本日电公司
2SB99制作材料：Ge-PNP
2SB99性质：低频或音频放大 （LF）
2SB99封装形式：直插封装
2SB99极限工作电压：30V
2SB99最大电流允许值：0.05A
2SB99最大工作频率：<1MHZ或未知
2SB99引脚数：3
2SB99最大耗散功率：0.125W
2SB99放大倍数：
2SB99图片代号：D-9
2SB99vtest：30
2SB99htest：999900
- 2SB99atest：0.05
2SB99wtest：0.125
2SB99代换 2SB99用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications | SAVANTIC |   | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min) • Collector Power Dissipation- : Pc= 40W@ Tc= 25C • Low Collector Saturation Voltage- : VCE(sa.)= -0.5V(Max)@ lc= -4A • Complement to Type 2SD1362 APPLICATIONS • High current switching applications. • Power amplifier a | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min) • Collector Power Dissipation- : Pc= 40W@ Tc= 25C • Low Collector Saturation Voltage- : VCE(sa.)= -0.5V(Max)@ lc= -4A • Complement to Type 2SD1362 APPLICATIONS • High current switching applications. • Power amplifier a | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications | SAVANTIC | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) • Collector Power Dissipation- : PC= 40W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -4A • Complement to Type 2SD1363 APPLICATIONS • High current switching applications. • Power | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage APPLICATIONS • Audio and general purpose | SAVANTIC | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter BreakdownVoltage- : V(BR,CEO= -60V(Min) • Collector Power Dissipation- : Pc= 30W@ Tc= 25c • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A • Complement to Type 2SD1354 APPLICATIONS • Designed for audio frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter BreakdownVoltage- : V(BR,CEO= -60V(Min) • Collector Power Dissipation- : Pc= 30W@ Tc= 25°C • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A • Complement to Type 2SD1354 APPLICATIONS • Designed for audio frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min) • Low Collector Saturation Voltage- : VCE(sa.)= -2.0V(Max)@ lc= -4A • Complement to Type 2SD1355 APPLICATIONS • Power amplifier applications. • Recommended for SOW high-fidelity audio frequency amplifier output stage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min) • Low Collector Saturation Voltage- : VCE(sa.)= -2.0V(Max)@ lc= -4A • Complement to Type 2SD1355 APPLICATIONS • Power amplifier applications. • Recommended for SOW high-fidelity audio frequency amplifier output stage. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High current capacity • Low collector saturation voltage APPLICATIONS • For audio frequency amplifier output stage applications | SAVANTIC | | ||
Silicon PNP Power Transistor 文件：254.8 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon PNP Power Transistors 文件：99.6 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：99.4 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistor 文件：131.36 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：91.76 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：90.77 Kbytes Page：3 Pages | SAVANTIC | | ||
Good Linearity of hFE 文件：107.85 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon PNP Power Transistor 文件：127.19 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH POWER SWITCHING APPLICATIONS. 文件：239.13 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
HIGH POWER SWITCHING APPLICATIONS. 文件：239.13 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
HIGH POWER SWITCHING APPLICATIONS. 文件：239.13 Kbytes Page：3 Pages | TOSHIBA 东芝 | |
2SB99产品属性
- 类型
描述
- 型号
2SB99
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-5 -30V -.05A .125W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
2026+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA/东芝 |
24+ |
TO-220 |
990000 |
明嘉莱只做原装正品现货 |
|||
POWER |
20+ |
IGBT-Driver |
31000 |
POWER原装主营型号-可开原型号增税票 |
|||
CONCEPT |
2023+ |
IGBT |
6895 |
原厂全新正品旗舰店优势现货 |
|||
24+ |
TO-220F |
10000 |
全新 |
||||
POWER |
22+ |
IGBT驱动器 |
20000 |
公司只有原装 品质保证 |
|||
TOSHIBA/东芝 |
20+ |
TO-220F |
1900 |
现货很近!原厂很远!只做原装 |
|||
最新 |
2000 |
原装正品现货 |
|||||
POWER |
24+ |
65300 |
一级代理/放心购买! |
||||
NEC |
25+ |
TO-126 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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2SB99规格书下载地址
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2SB99数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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