2SB99晶体管资料

  • 2SB99别名:2SB99三极管、2SB99晶体管、2SB99晶体三极管

  • 2SB99生产厂家:日本日电公司

  • 2SB99制作材料:Ge-PNP

  • 2SB99性质:低频或音频放大 (LF)

  • 2SB99封装形式:直插封装

  • 2SB99极限工作电压:30V

  • 2SB99最大电流允许值:0.05A

  • 2SB99最大工作频率:<1MHZ或未知

  • 2SB99引脚数:3

  • 2SB99最大耗散功率:0.125W

  • 2SB99放大倍数

  • 2SB99图片代号:D-9

  • 2SB99vtest:30

  • 2SB99htest:999900

  • 2SB99atest:0.05

  • 2SB99wtest:0.125

  • 2SB99代换 2SB99用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52B,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min) • Collector Power Dissipation- : Pc= 40W@ Tc= 25C • Low Collector Saturation Voltage- : VCE(sa.)= -0.5V(Max)@ lc= -4A • Complement to Type 2SD1362 APPLICATIONS • High current switching applications. • Power amplifier a

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min) • Collector Power Dissipation- : Pc= 40W@ Tc= 25C • Low Collector Saturation Voltage- : VCE(sa.)= -0.5V(Max)@ lc= -4A • Complement to Type 2SD1362 APPLICATIONS • High current switching applications. • Power amplifier a

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) • Collector Power Dissipation- : PC= 40W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -4A • Complement to Type 2SD1363 APPLICATIONS • High current switching applications. • Power

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage APPLICATIONS • Audio and general purpose

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter BreakdownVoltage- : V(BR,CEO= -60V(Min) • Collector Power Dissipation- : Pc= 30W@ Tc= 25c • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A • Complement to Type 2SD1354 APPLICATIONS • Designed for audio frequency power amplifier applications.

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter BreakdownVoltage- : V(BR,CEO= -60V(Min) • Collector Power Dissipation- : Pc= 30W@ Tc= 25°C • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A • Complement to Type 2SD1354 APPLICATIONS • Designed for audio frequency power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min) • Low Collector Saturation Voltage- : VCE(sa.)= -2.0V(Max)@ lc= -4A • Complement to Type 2SD1355 APPLICATIONS • Power amplifier applications. • Recommended for SOW high-fidelity audio frequency amplifier output stage.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min) • Low Collector Saturation Voltage- : VCE(sa.)= -2.0V(Max)@ lc= -4A • Complement to Type 2SD1355 APPLICATIONS • Power amplifier applications. • Recommended for SOW high-fidelity audio frequency amplifier output stage.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High current capacity • Low collector saturation voltage APPLICATIONS • For audio frequency amplifier output stage applications

SAVANTIC

Silicon PNP Power Transistor

文件:254.8 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:99.6 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:99.4 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:131.36 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:91.76 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:90.77 Kbytes Page:3 Pages

SAVANTIC

Good Linearity of hFE

文件:107.85 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

文件:127.19 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH POWER SWITCHING APPLICATIONS.

文件:239.13 Kbytes Page:3 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS.

文件:239.13 Kbytes Page:3 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS.

文件:239.13 Kbytes Page:3 Pages

TOSHIBA

东芝

2SB99产品属性

  • 类型

    描述

  • 型号

    2SB99

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-5 -30V -.05A .125W

更新时间:2025-11-21 11:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
POWER
20+
IGBT-Driver
31000
POWER原装主营型号-可开原型号增税票
TOSHIBA/东芝
23+
TO-220
900000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA/东芝
20+
TO-220F
1900
现货很近!原厂很远!只做原装
SCALE
1922+
NA
1550
原盒原包装现货原装假一罚十价优
Power
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
NEC
25+
TO-126
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
24+
TO-220F
10000
全新
POWER
24+
65300
一级代理/放心购买!
TOSHIBA/东芝
17+
TO-220
31518
原装正品 可含税交易
NK/南科功率
2025+
SOT-89
986966
国产

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