2SB97晶体管资料

  • 2SB97别名:2SB97三极管、2SB97晶体管、2SB97晶体三极管

  • 2SB97生产厂家:日本东芝公司

  • 2SB97制作材料:Ge-PNP

  • 2SB97性质:低频或音频放大 (LF)_低噪放大 (ra)

  • 2SB97封装形式:直插封装

  • 2SB97极限工作电压:18V

  • 2SB97最大电流允许值:0.005A

  • 2SB97最大工作频率:<1MHZ或未知

  • 2SB97引脚数:3

  • 2SB97最大耗散功率:0.04W

  • 2SB97放大倍数

  • 2SB97图片代号:C-47

  • 2SB97vtest:18

  • 2SB97htest:999900

  • 2SB97atest:0.005

  • 2SB97wtest:0.04

  • 2SB97代换 2SB97用什么型号代替:AC125,AC126,AC151R,AC191,ACY32,2SB173,3AX51X,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP epitaxial planer type(For low-voltage output amplification)

Silicon PNP epitaxial planar type For low-voltage output amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Panasonic

松下

Silicon PNP Epitaxial Planar Type

■ Features ● Low collector to emitter saturation voltage VCE(sat). ● For low-voltage output amplification

KEXIN

科信电子

2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR

Si NPN Planar UHF RF Amplifier Features • High PG • Low NF • Excellent forward AGC characteristics

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION ·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications

SAVANTIC

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain-: hFE = 2000(Min)@ IC= -2A ·Low Collector-Emitter Saturation Voltage-: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308 APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications

SAVANTIC

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain-: hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage-: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use.

ISC

无锡固电

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Panasonic

松下

For Low-Frequency Output Amplification

Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Panasonic

松下

2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR

Si NPN Planar UHF RF Amplifier Features • High PG • Low NF • Excellent forward AGC characteristics

Panasonic

松下

2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR

Si NPN Planar UHF RF Amplifier Features • High PG • Low NF • Excellent forward AGC characteristics

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Wide area of safe operation APPLICATIONS • For power amplifier and general purpose applications

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for high power amplifications.

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for high power amplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR

Panasonic

松下

PNP Transistors

文件:916.36 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:933.75 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:933.75 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:933.75 Kbytes Page:2 Pages

KEXIN

科信电子

Silicon PNP Darlington Power Transistor

文件:130.199 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:218.24 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:92.7 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

文件:129.63 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Panasonic

松下

2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR

Panasonic

松下

Silicon PNP Power Transistors

文件:135.89 Kbytes Page:3 Pages

SAVANTIC

2SB97产品属性

  • 类型

    描述

  • 型号

    2SB97

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY MATS. TRANS. SC-59-15V -.5A .2W SURFACE MOUNT

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-12-25 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC/松下
24+
TO92
990000
明嘉莱只做原装正品现货
22+
100000
代理渠道/只做原装/可含税
SAN
24+
原厂封装
3500
原装现货假一罚十
CJ/长电
24+
NA/
24611
原装现货,当天可交货,原型号开票
PANASONIC/松下
25+
TO92
54648
百分百原装现货 实单必成 欢迎询价
PAN
TO-92
8553
一级代理 原装正品假一罚十价格优势长期供货
长电
25+
TO-92M
30000
代理全新原装现货,价格优势
CJ/长电
21+
TO-92M
230000
百域芯优势 实单必成 可开13点增值税发票
PANASONIC
24+
TO-92
2700
CJ/长电
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

2SB97数据表相关新闻