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2SB97晶体管资料
2SB97别名：2SB97三极管、2SB97晶体管、2SB97晶体三极管
2SB97生产厂家：日本东芝公司
2SB97制作材料：Ge-PNP
2SB97性质：低频或音频放大 （LF）_低噪放大 （ra）
2SB97封装形式：直插封装
2SB97极限工作电压：18V
2SB97最大电流允许值：0.005A
2SB97最大工作频率：<1MHZ或未知
2SB97引脚数：3
2SB97最大耗散功率：0.04W
2SB97放大倍数：
2SB97图片代号：C-47
2SB97vtest：18
2SB97htest：999900
- 2SB97atest：0.005
2SB97wtest：0.04
2SB97代换 2SB97用什么型号代替：AC125,AC126,AC151R,AC191,ACY32,2SB173,3AX51X,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planer type(For low-voltage output amplification) Silicon PNP epitaxial planar type For low-voltage output amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing | PANASONIC 松下 |   | ||
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR Si NPN Planar UHF RF Amplifier Features • High PG • Low NF • Excellent forward AGC characteristics | PANASONIC 松下 | | ||
Silicon PNP Epitaxial Planar Type ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● For low-voltage output amplification | KEXIN 科信电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain-: hFE = 2000(Min)@ IC= -2A ·Low Collector-Emitter Saturation Voltage-: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308 APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain-: hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage-: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use. | ISC 无锡固电 | | ||
Silicon PNP epitaxial planer type(For low-frequency output amplification) Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC | PANASONIC 松下 | | ||
For Low-Frequency Output Amplification Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC | PANASONIC 松下 | | ||
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR Si NPN Planar UHF RF Amplifier Features • High PG • Low NF • Excellent forward AGC characteristics | PANASONIC 松下 | | ||
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR Si NPN Planar UHF RF Amplifier Features • High PG • Low NF • Excellent forward AGC characteristics | PANASONIC 松下 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for high power amplifications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Wide area of safe operation APPLICATIONS • For power amplifier and general purpose applications | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for high power amplifications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR | PANASONIC 松下 | | ||
PNP Transistors 文件：916.36 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：933.75 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：933.75 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：933.75 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
Silicon PNP Darlington Power Transistor 文件：130.199 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：218.24 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistor 文件：129.63 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：92.7 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP epitaxial planer type(For low-frequency output amplification) | PANASONIC 松下 | | ||
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR | PANASONIC 松下 | | ||
Silicon PNP Power Transistors 文件：135.89 Kbytes Page：3 Pages | SAVANTIC | |
2SB97产品属性
- 类型
描述
- 型号
2SB97
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY MATS. TRANS. SC-59-15V -.5A .2W SURFACE MOUNT
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC/松下 |
2026+ |
TO92 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
CJ/长电 |
25+ |
TO-92M |
20000 |
原装 |
|||
CJ/长电 |
21+ |
TO-92M |
230000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
SANYO/三洋 |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
PANASONIC |
24+ |
TO-92 |
2700 |
||||
长电 |
25+ |
TO-92M |
30000 |
代理全新原装现货,价格优势 |
|||
CJ |
22+ |
TO-92L |
20000 |
公司只有原装 品质保证 |
|||
SANYO |
06+ |
TO-92 |
201 |
全新 发货1-2天 |
|||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
PAN |
TO-92 |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
2SB97规格书下载地址
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- 2SB954
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2SB97数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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