位置：首页 > IC中文资料第8268页 > 2SB649D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON |   | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
TO-126C Plastic-Encapsulated Transistors 文件：63.42 Kbytes Page：1 Pages | TEL | |
2SB649D产品属性
- 类型
描述
- 型号
2SB649D
- 功能描述
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
HITACHI/日立 |
24+ |
TO-126 |
1750 |
大批量供应优势库存热卖 |
|||
UTC/友顺 |
24+ |
DIP16 |
9600 |
原装现货,优势供应,支持实单! |
|||
UTC/友顺 |
24+ |
SOT89 |
21574 |
郑重承诺只做原装进口现货 |
|||
UTC |
2424 |
TO-126 |
170 |
原装现货17377264928微信同号 |
|||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
UTC |
25+ |
SOT-89 |
17900 |
原厂原装,价格优势 |
|||
友顺 UTC |
23+ |
SOT-89 |
17050 |
原装正品，实单请联系 |
|||
Cj江苏长电 |
24+ |
TO126 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
23+ |
TO126 |
8560 |
受权代理!全新原装现货特价热卖! |
2SB649D规格书下载地址
2SB649D参数引脚图相关
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- 4921
- 4899
- 485接口
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- 4735
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- 4313
- 4069
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- 3q1
- 3g汽车
- 3579
- 35001
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- 31337
- 303c
- 2sc4226
- 2SB689
- 2SB688
- 2SB686
- 2SB683
- 2SB682
- 2SB681
- 2SB680
- 2SB679
- 2SB677
- 2SB676
- 2SB675
- 2SB674
- 2SB673
- 2SB669
- 2SB668
- 2SB656
- 2SB655
- 2SB654
- 2SB653A
- 2SB653
- 2SB649L-B-T6C-K
- 2SB649L-B-T6C-B
- 2SB649L-B-T60-R
- 2SB649L-B-T60-K
- 2SB649L-B-T60-B
- 2SB649L-B-AB3-R
- 2SB649L-B-AB3-K
- 2SB649L-B-AB3-B
- 2SB649-D-T92-R
- 2SB649-D-T92-K
- 2SB649-D-T92-B
- 2SB649-D-T6C-R
- 2SB649-D-T6C-K
- 2SB649-D-T6C-B
- 2SB649-D-T60-R
- 2SB649-D-T60-K
- 2SB649-D-T60-B
- 2SB649-D-AB3-R
- 2SB649-D-AB3-K
- 2SB649-D-AB3-B
- 2SB649-C-T92-R
- 2SB649-C-T92-K
- 2SB649-C-T92-B
- 2SB649-C-T6C-R
- 2SB649-C-T6C-K
- 2SB649-C-T6C-B
- 2SB649-C-T60-R
- 2SB649-C-T60-K
- 2SB649-C-T60-B
- 2SB649-C-AB3-R
- 2SB649-C-AB3-K
- 2SB649-C-AB3-B
- 2SB649C
- 2SB649-B-T92-R
- 2SB649-B-T92-K
- 2SB649-B-T92-B
- 2SB649-B-T6C-R
- 2SB649-B-T6C-K
- 2SB649-B-T6C-B
- 2SB649-B-T60-R
- 2SB649A
- 2SB649
- 2SB648A
- 2SB648
- 2SB647L
- 2SB647A
- 2SB647
- 2SB646A
- 2SB646
- 2SB645
- 2SB644
- 2SB643
- 2SB642
- 2SB638
- 2SB634
- 2SB633P
- 2SB633
- 2SB632K
- 2SB632
- 2SB631K
2SB649D数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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