位置：首页 > IC中文资料第8268页 > 2SB649D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 |   | ||
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
TO-126C Plastic-Encapsulated Transistors 文件：63.42 Kbytes Page：1 Pages | TEL | |
2SB649D产品属性
- 类型
描述
- 型号
2SB649D
- 功能描述
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
24+ |
SOT89 |
6000 |
深圳原装现货价格优势 |
|||
Cj江苏长电 |
24+ |
TO126 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
MALAYSIA |
23+24 |
TO126 |
28950 |
原装现货.优势热卖.终端BOM表可配单 |
|||
PMC |
TO-126 |
367 |
旗舰店 |
||||
友顺 UTC |
23+ |
SOT-89 |
17050 |
原装正品，实单请联系 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
UTC/友顺 |
25+ |
SOT-89 |
20300 |
UTC/友顺原装特价2SB649G-D-AB3-R即刻询购立享优惠#长期有货 |
|||
HIT |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
|||
HITACHI/日立 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
CJ/长电 |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
2SB649D芯片相关品牌
2SB649D规格书下载地址
2SB649D参数引脚图相关
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- 2SB632K
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2SB649D数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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