位置：首页 > IC中文资料 > 2SB649ACIC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PNPEpitaxialPlanarTransistors PNPEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology |  |   | |
BIPOLARPOWERGENERALPURPOSETRANSISTOR PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •Complementtotype2SD669/669A •HighbreakdownvoltageVCEO:-120/-160V •Highcurrent-1.5A •Lowsaturationvoltage,excellenthFElinearity APPLICATIONS •Forlow-frequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | | |
PNPTypePlasticEncapsulateTransistors FEATURES Powersmplifierapplications Powerdissipation PCM:1W（Tamb=25℃） Collectorcurrent ICM:-1.5A Collector-basevoltage V(BR)CBO:-180V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150 Collector-emittervoltage VC | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
TO-126CPlastic-EncapsulatedTransistors 文件：63.42 Kbytes Page：1 Pages | TELTokyo Electron Ltd. 东电电子东京电子有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SECOS |
24+ |
NA/ |
8250 |
原装现货,当天可交货,原型号开票 |
|||
PMC |
2016+ |
TO-126 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SVNTC |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
CJ |
24+ |
TO-126 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI/日立 |
24+ |
TO-126 |
158331 |
明嘉莱只做原装正品现货 |
|||
日立 |
1950+ |
TO-126 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
UTC |
2024+ |
TO126 |
500000 |
诚信服务,绝对原装原盘 |
|||
UTC/友顺 |
23+ |
SOP89 |
6500 |
专注配单,只做原装进口现货 |
|||
UTC |
21+ |
TO126 |
39000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SB649ACIC芯片相关品牌
2SB649ACIC规格书下载地址
2SB649ACIC参数引脚图相关
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- 485接口
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- 3g汽车
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- 2SB669
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- 2SB656
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- 2SB653
- 2SB649A-D-T6C-R
- 2SB649A-D-T6C-K
- 2SB649A-D-T6C-B
- 2SB649A-D-T60-R
- 2SB649A-D-T60-K
- 2SB649A-D-T60-B
- 2SB649AD-C
- 2SB649A-D-AB3-R
- 2SB649A-D-AB3-K
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- 2SB649A-C-T6C-R
- 2SB649A-C-T6C-K
- 2SB649A-C-T6C-B
- 2SB649A-C-T60-R
- 2SB649A-C-T60-K
- 2SB649A-C-T60-B
- 2SB649A-C-AB3-R
- 2SB649A-C-AB3-K
- 2SB649A-C-AB3-B
- 2SB649AC-416
- 2SB649AC-145
- 2SB649AC/2SD669AC
- 2SB649A-C
- 2SB649AC
- 2SB649A-B-T92-R
- 2SB649A-B-T92-K
- 2SB649A-B-T92-B
- 2SB649A-B-T6C-R
- 2SB649A-B-T6C-K
- 2SB649A-B-T6C-B
- 2SB649A-B-T60-R
- 2SB649A-B-T60-K
- 2SB649A-B-T60-B
- 2SB649A-B-AB3-R
- 2SB649A-B-AB3-K
- 2SB649A-B-AB3-B
- 2SB649A
- 2SB649
- 2SB648A
- 2SB648
- 2SB647L
- 2SB647A
- 2SB647
- 2SB646A
- 2SB646
- 2SB645
- 2SB644
- 2SB643
- 2SB642
- 2SB638
- 2SB634
- 2SB633P
- 2SB633
- 2SB632K
- 2SB632
- 2SB631K
2SB649ACIC数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB857L-TO126CK-D-TG_UTC代理商
2SB857L-TO126CK-D-TG_UTC代理商
2023-2-142SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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