2SB59晶体管资料
2SB59别名：2SB59三极管、2SB59晶体管、2SB59晶体三极管
2SB59生产厂家：日本富士通公司
2SB59制作材料：Ge-PNP
2SB59性质：低频或音频放大 （LF）_开关管 （S）
2SB59封装形式：直插封装
2SB59极限工作电压：30V
2SB59最大电流允许值：0.1A
2SB59最大工作频率：<1MHZ或未知
2SB59引脚数：3
2SB59最大耗散功率：0.15W
2SB59放大倍数：
2SB59图片代号：C-47
2SB59vtest：30
2SB59htest：999900
- 2SB59atest：0.1
2SB59wtest：0.15
2SB59代换 2SB59用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON TRANSISTORS
| MICRO-ELECTRONICS |   | ||
SILICON TRANSISTORS
| MICRO-ELECTRONICS | | ||
SILICON TRANSISTORS
| MICRO-ELECTRONICS | | ||
SILICON TRANSISTORS
| MICRO-ELECTRONICS | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD525 • High breakdown voltage :VCEO=-100V • Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS • Power amplifier applications • Recommend for 30W high fidelity audio frequency amplifier output stage | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD525 • High breakdown voltage :VCEO=-100V • Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS • Power amplifier applications • Recommend for 30W high fidelity audio frequency amplifier output stage | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD525 • High breakdown voltage :VCEO=-100V • Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS • Power amplifier applications • Recommend for 30W high fidelity audio frequency amplifier output stage | SAVANTIC | | ||
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) LOW FREQUENCY POWER AMPLIFIER ● Complement to 2SD525 | WINGS 永盛电子 | | ||
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) LOW FREQUENCY POWER AMPLIFIER ● Complement to 2SD526 | WINGS 永盛电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD526 • Good linearity of hFE APPLICATIONS • Power amplifier applications • Recommend for 20～25W high fidelity audio frequency amplifier output stage | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD526 • Good linearity of hFE APPLICATIONS • Power amplifier applications • Recommend for 20～25W high fidelity audio frequency amplifier output stage | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD526 • Good linearity of hFE APPLICATIONS • Power amplifier applications • Recommend for 20～25W high fidelity audio frequency amplifier output stage | ISC 无锡固电 | | ||
POWER TRANSISTORS(4.0A,80V,30W)
| MOSPEC 统懋 | | ||
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS FOR AUDIO FREQUENCY POWER AMP., CONVERTERS, ELECTRONIC GOVERNORS The 2SB598NP/2SD545NP are complementary pair transistors that are packaged in small packages and are large in current capacity and excellent in saturation characteristic and hFE linearity. In addition to the above application areas, | SANYO 三洋 | | ||
750mW NPN silicon transistor | MICRO-ELECTRONICS | | ||
Silicon PNP Power Transistors 文件：140.37 Kbytes Page：4 Pages | SAVANTIC | | ||
Trans GP BJT PNP 100V 5A 3-Pin(3+Tab) TO-220AB | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistor 文件：130.199 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：222.17 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：222.17 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
TRANSISTOR 文件：192.33 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistor 文件：128.86 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
功率三极管 | STMICROELECTRONICS 意法半导体 | | ||
Silicon PNP Power Transistors 文件：141.3 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：241.05 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：241.05 Kbytes Page：4 Pages | JMNIC 锦美电子 | |
2SB59产品属性
- 类型
描述
- Maximum Transition Frequency：
5(Typ)MHz
- Maximum Power Dissipation：
40000mW
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
5A
- Maximum Collector Emitter Voltage：
100V
- Maximum Collector Emitter Saturation Voltage：
2@0.4A@4AV
- Maximum Collector Base Voltage：
100V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
2026+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
SANYO |
05+ |
TO-92 |
750 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
25+ |
TO-220 |
100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INCHANG |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
DUBILIER |
2450+ |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
||||
NEC |
23+ |
模块 |
362 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
SAMSUNG |
24+ |
5820 |
|||||
FAIRCHILD |
20+ |
TO-220 |
167 |
全新 发货1-2天 |
2SB59规格书下载地址
2SB59参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB625
- 2SB624
- 2SB616(A)
- 2SB616
- 2SB615
- 2SB613
- 2SB612(A)
- 2SB612
- 2SB611(A)
- 2SB611
- 2SB61
- 2SB609
- 2SB608(A)
- 2SB608
- 2SB607
- 2SB606
- 2SB605
- 2SB604
- 2SB602
- 2SB601
- 2SB600
- 2SB60(A)
- 2SB5U9
- 2SB599
- 2SB598
- 2SB596
- 2SB595
- 2SB592A
- 2SB592
- 2SB591A
- 2SB591
- 2SB589
- 2SB588
- 2SB587
- 2SB586
- 2SB585
- 2SB584
- 2SB583
- 2SB582
- 2SB581
- 2SB580
- 2SB58
- 2SB57A
- 2SB579
- 2SB578
- 2SB577
- 2SB576
- 2SB575
- 2SB574
- 2SB573
- 2SB572
- 2SB568
- 2SB567
- 2SB566K
- 2SB566A
- 2SB566
- 2SB565
- 2SB564A
- 2SB564
- 2SB563
- 2SB562
- 2SB561
- 2SB560
- 2SB559
- 2SB558
- 2SB557
- 2SB556
- 2SB555
- 2SB554
- 2SB553
- 2SB552
2SB59数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
