2SB163晶体管资料
2SB163别名：2SB163三极管、2SB163晶体管、2SB163晶体三极管
2SB163生产厂家：日本日电公司
2SB163制作材料：Ge-PNP
2SB163性质：低频或音频放大 （LF）_输出极 （E）
2SB163封装形式：直插封装
2SB163极限工作电压：30V
2SB163最大电流允许值：0.1A
2SB163最大工作频率：<1MHZ或未知
2SB163引脚数：3
2SB163最大耗散功率：0.125W
2SB163放大倍数：β=75
2SB163图片代号：D-9
2SB163vtest：30
2SB163htest：999900
- 2SB163atest：0.1
2SB163wtest：0.125
2SB163代换 2SB163用什么型号代替：AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX51A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping | Panasonic 松下 |   | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma | Panasonic 松下 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma | Panasonic 松下 | | ||
High-current gain Power Transistor (-60V, -3A) 2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain. | ROHM 罗姆 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) | Panasonic 松下 | | ||
High-current gain Power Transistor (-60V/ -3A) | ROHM 罗姆 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
56 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA/东芝 |
25+ |
TO-220NIS |
65428 |
百分百原装现货 实单必成 |
|||
东芝 |
20+ |
TO-126F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
24+ |
TO-126F |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
24+/25+ |
20000 |
原装正品现货库存价优 |
||||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
NEC |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
TOSHIBA/东芝 |
22+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
TOS |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
TOS |
25+23+ |
TO-92 |
37655 |
绝对原装正品全新进口深圳现货 |
2SB163芯片相关品牌
2SB163规格书下载地址
2SB163参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1669
- 2SB1668
- 2SB1667
- 2SB1664
- 2SB166
- 2SB1659
- 2SB1658
- 2SB1657
- 2SB1655
- 2SB1653
- 2SB1651
- 2SB165
- 2SB1649
- 2SB1648
- 2SB1647
- 2SB1645
- 2SB1643
- 2SB1642
- 2SB1641
- 2SB1640
- 2SB164
- 2SB1639
- 2SB1638A
- 2SB1638
- 2SB1632
- 2SB1631
- 2SB1630
- 2SB1629
- 2SB1628
- 2SB1627
- 2SB1626
- 2SB1625
- 2SB1624
- 2SB1623
- 2SB1622
- 2SB1621
- 2SB1620
- 2SB162
- 2SB1619
- 2SB1618
- 2SB1617
- 2SB1616
- 2SB1614
- 2SB1612
- 2SB1611
- 2SB1610
- 2SB161
- 2SB1607
- 2SB1606
- 2SB1605
- 2SB1604
- 2SB1603
- 2SB1602
- 2SB1599
- 2SB1596
- 2SB1595
- 2SB1594
2SB163数据表相关新闻
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2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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