For Power Amplification (-60V, -3A)

2SB1566 Power Transistor(-50V, -3A) Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB = -2A / -0.2A 2) Wide SOA (safe operating area). 3) Complements the 2SD2395. 2SD2395 Power Transistor(50V, 3A) Features 1) Low saturation voltage, typically VCE(sat) = 0.2V at

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2395

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2395

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Excellent DC current gain characteristics • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SD2395