2SB154晶体管资料
2SB154别名：2SB154三极管、2SB154晶体管、2SB154晶体三极管
2SB154生产厂家：日本日立公司
2SB154制作材料：Ge-PNP
2SB154性质：低频或音频放大 （LF）
2SB154封装形式：直插封装
2SB154极限工作电压：12V
2SB154最大电流允许值：0.07A
2SB154最大工作频率：<1MHZ或未知
2SB154引脚数：3
2SB154最大耗散功率：0.15W
2SB154放大倍数：
2SB154图片代号：C-47
2SB154vtest：12
2SB154htest：999900
- 2SB154atest：0.07
2SB154wtest：0.15
2SB154代换 2SB154用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB154040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use | SILAN 士兰微 |   | ||
SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB154060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use | SILAN 士兰微 | | ||
LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB154100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera | SILAN 士兰微 | | ||
Silicon PNP epitaxial planar type(For power amplification) ■ Features • High forward current transfer ratio hFEwhich has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw =25° | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications | JMNIC 锦美电子 | | ||
Silicon PNP epitaxial planar type(For power amplification) ■ Features • High forward current transfer ratio hFEwhich has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw =25° | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications | ISC 无锡固电 | | ||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
肖特基二极管芯片 | SILAN 士兰微 | | ||
肖特基二极管芯片 | SILAN 士兰微 | | ||
Silicon PNP epitaxial planar type(For power amplification) | Panasonic 松下 | | ||
Silicon PNP Power Transistors 文件：235.59 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon PNP Power Transistor 文件：129.22 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：193.05 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：193.05 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：235.59 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：193.39 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：193.39 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 80V 3A TO220D-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Panasonic 松下 | |
2SB154产品属性
- 类型
描述
- 型号
2SB154
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR SUBBING WITH 2SB1548A-P
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC/松下 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
PANASON/松下 |
24+ |
NA/ |
3364 |
原装现货,当天可交货,原型号开票 |
|||
PANICSONIC |
25+ |
TO-220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
PANASONIC |
24+ |
TO-220F |
20000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
MATSUSHITA |
25+ |
TO-220F |
45000 |
MATSUSHITA全新现货2SB1548A即刻询购立享优惠#长期有排单订 |
|||
PANASONIC/松下 |
23+ |
TO-220F |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Panasonic-SSG |
24+ |
TO-220D |
1978 |
||||
PANICSONIC |
2023+ |
TO-220F |
75000 |
原厂全新正品旗舰店优势现货 |
|||
PANASONIC/松下 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PANASONIC |
24+ |
TO-220F |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
2SB154芯片相关品牌
2SB154规格书下载地址
2SB154参数引脚图相关
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- 485接口
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- 3g汽车
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- 2SB156(H)
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- 2SB155
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- 2SB1535(F5)
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- 2SB1532
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- 2SB1530
- 2SB153
- 2SB1529
- 2SB1527
- 2SB1526
- 2SB1522K
- 2SB1520
- 2SB152(A)
- 2SB1519
- 2SB1518
- 2SB1517
- 2SB1516(F5)
- 2SB1516
- 2SB1515
- 2SB1514
- 2SB1513
- 2SB1512
- 2SB1511
- 2SB1510
- 2SB1509
- 2SB1508
- 2SB1507
- 2SB1505
- 2SB1504
- 2SB1503
- 2SB1502
- 2SB1496
2SB154数据表相关新闻
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2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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