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2SB150晶体管资料
2SB150别名：2SB150三极管、2SB150晶体管、2SB150晶体三极管
2SB150生产厂家：日本东芝公司
2SB150制作材料：Ge-PNP
2SB150性质：开关管 （S）
2SB150封装形式：直插封装
2SB150极限工作电压：105V
2SB150最大电流允许值：0.04A
2SB150最大工作频率：<1MHZ或未知
2SB150引脚数：3
2SB150最大耗散功率：0.05W
2SB150放大倍数：
2SB150图片代号：C-47
2SB150vtest：105
2SB150htest：999900
- 2SB150atest：0.04
2SB150wtest：0.05
2SB150代换 2SB150用什么型号代替：ACY39,2N2042,2N2043,3AX54D,
2SB150价格
参考价格：￥4.8234
型号：2SB15040QA 品牌：Panasonic Electronic Com 备注：这里有2SB150多少钱，2025年最近7天走势，今日出价，今日竞价，2SB150批发/采购报价，2SB150行情走势销售排行榜，2SB150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planar type Darlington Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 |   | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -4A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A • Complement to Type 2SD2275 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VcE • Complement to Type 2SD2276 • Complement to Type 2SD2276 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications | SAVANTIC | | ||
Silicon PNP epitaxial planar type darlington Silicon PNP epitaxial planar type darlington For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping | Panasonic 松下 | | ||
High-Current Switching Applications 50V/7A High-Current Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters. | SANYO 三洋 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2280 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage VCE(sat) = -0 5(V){Max)@lc= -6A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type2SD2281 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters | JMNIC 锦美电子 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters. | SANYO 三洋 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters | ISC 无锡固电 | | ||
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2282 APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters. | ISC 无锡固电 | | ||
High-Current Switching Applications Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Applications · Relay drivers, high-speed inverters, converters. | SANYO 三洋 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2282 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers, high-speed Inverters,converters | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：115.65 Kbytes Page：3 Pages | SAVANTIC | | ||
Power Device - Power Transistors - For Audio | Panasonic 松下 | | ||
Power Device - Power Transistors - Others | Panasonic 松下 | | ||
封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 50V 8A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Panasonic 松下 | | ||
封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 50V 8A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Panasonic 松下 | | ||
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件：88.13 Kbytes Page：2 Pages | ROHM 罗姆 | | ||
PNP Epitaxial Planar Silicon Transistors 50V/7A High-Current Switching Applications | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors 文件：164.38 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：212.17 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：215.29 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：215.29 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：164.49 Kbytes Page：3 Pages | SAVANTIC | |
2SB150产品属性
- 类型
描述
- 型号
2SB150
- 功能描述
TRANS PNP 50VCEO 8A MT-3
- RoHS
否
- 类别
分离式半导体产品 >> 晶体管(BJT) - 单路
- 系列
-
- 标准包装
1
- 系列
-
- 晶体管类型
NPN 电流 -
- 集电极(Ic)（最大）
1A 电压 -
- 集电极发射极击穿（最大）
30V
- Ib、Ic条件下的Vce饱和度（最大）
200mV @ 100mA，1A 电流 -
- 集电极截止（最大）
100nA 在某 Ic、Vce
- 时的最小直流电流增益(hFE)
300 @ 500mA，5V 功率 -
- 最大
710mW 频率 -
- 转换
100MHz
- 安装类型
表面贴装
- 封装/外壳
TO-236-3，SC-59，SOT-23-3
- 供应商设备封装
SOT-23-3（TO-236）
- 包装
Digi-Reel®
- 其它名称
MMBT489LT1GOSDKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
150 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANASONIC/松下 |
22+ |
MT-3-AT1 |
100000 |
代理渠道/只做原装/可含税 |
|||
PANASONIC-SS |
24+ |
NA |
2826 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
PANASONIC/松下 |
23+ |
MT-3-AT1 |
4000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HITACHI |
24+ |
90000 |
|||||
三年内 |
1983 |
只做原装正品 |
|||||
ROHM/罗姆 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PANASONIC/松下 |
23+ |
TO3PL |
6000 |
专注配单,只做原装进口现货 |
|||
MAT |
22+ |
TO-3PL |
6000 |
十年配单,只做原装 |
|||
PANASONIC/松下 |
24+ |
TO-3L |
60000 |
全新原装现货 |
2SB150芯片相关品牌
2SB150规格书下载地址
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2SB150数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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DdatasheetPDF页码索引
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