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2SB150晶体管资料

  • 2SB150别名：2SB150三极管、2SB150晶体管、2SB150晶体三极管

  • 2SB150生产厂家：日本东芝公司

  • 2SB150制作材料：Ge-PNP

  • 2SB150性质：开关管 （S）

  • 2SB150封装形式：直插封装

  • 2SB150极限工作电压：105V

  • 2SB150最大电流允许值：0.04A

  • 2SB150最大工作频率：<1MHZ或未知

  • 2SB150引脚数：3

  • 2SB150最大耗散功率：0.05W

  • 2SB150放大倍数：

  • 2SB150图片代号：C-47

  • 2SB150vtest：105

  • 2SB150htest：999900

  • 2SB150atest：0.04

  • 2SB150wtest：0.05

  • 2SB150代换 2SB150用什么型号代替：ACY39,2N2042,2N2043,3AX54D,

2SB150价格

参考价格：￥4.8234

型号：2SB15040QA 品牌：Panasonic Electronic Com 备注：这里有2SB150多少钱，2025年最近7天走势，今日出价，今日竞价，2SB150批发/采购报价，2SB150行情走势销售排行榜，2SB150报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SB1502

Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Panasonic

松下

2SB1502

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -4A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A • Complement to Type 2SD2275 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

ISC

无锡固电

2SB1502

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1503

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VcE • Complement to Type 2SD2276 • Complement to Type 2SD2276 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1503

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Panasonic

松下

2SB1503

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications.

ISC

无锡固电

2SB1503

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications

SAVANTIC

2SB1504

Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping

Panasonic

松下

2SB1507

High-Current Switching Applications

50V/7A High-Current Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

SANYO

三洋

2SB1507

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

ISC

无锡固电

2SB1507

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1507

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2280 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

SAVANTIC

2SB1508

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

SAVANTIC

2SB1508

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat) = -0 5(V){Max)@lc= -6A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type2SD2281 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1508

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

JMNIC

锦美电子

2SB1508

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

SANYO

三洋

2SB1508

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

ISC

无锡固电

2SB1509

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2282 APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters.

ISC

无锡固电

2SB1509

High-Current Switching Applications

Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Applications · Relay drivers, high-speed inverters, converters.

SANYO

三洋

2SB1509

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2282 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers, high-speed Inverters,converters

SAVANTIC

2SB1503

Silicon PNP Power Transistors

文件：115.65 Kbytes Page：3 Pages

SAVANTIC

2SB1504

Power Device - Power Transistors - Others

Panasonic

松下

2SB15040QA

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 50V 8A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Panasonic

松下

2SB15040RA

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 50V 8A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Panasonic

松下

2SB1505

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes Page：2 Pages

ROHM

罗姆

2SB1507

Trans GP BJT PNP 50V 7A 3-Pin (3+Tab) TO-3PML

ETC

知名厂家

2SB1507

PNP Epitaxial Planar Silicon Transistors 50V/7A High-Current Switching Applications

ONSEMI

安森美半导体

2SB1507

Silicon PNP Power Transistors

文件：164.38 Kbytes Page：3 Pages

SAVANTIC

2SB1508

Silicon PNP Power Transistors

文件：212.17 Kbytes Page：4 Pages

SAVANTIC

2SB1508_15

Silicon PNP Power Transistors

文件：215.29 Kbytes Page：4 Pages

JMNIC

锦美电子

2SB1508_2014

Silicon PNP Power Transistors

文件：215.29 Kbytes Page：4 Pages

JMNIC

锦美电子

2SB1509

Silicon PNP Power Transistors

文件：164.49 Kbytes Page：3 Pages

SAVANTIC

2SB150产品属性

  • 类型

    描述

  • 型号

    2SB150

  • 功能描述

    TRANS PNP 50VCEO 8A MT-3

  • RoHS

    否

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    -

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)（最大）

    1A 电压 -

  • 集电极发射极击穿（最大）

    30V

  • Ib、Ic条件下的Vce饱和度（最大）

    200mV @ 100mA，1A 电流 -

  • 集电极截止（最大）

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA，5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3，SC-59，SOT-23-3

  • 供应商设备封装

    SOT-23-3（TO-236）

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

2SB150供应商更多...

更新时间：2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SB1502
PANASON/松下
24+
NA/
150
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市金芯世纪电子有限公司
2SB1504
PANASONIC/松下
22+
MT-3-AT1
100000
代理渠道/只做原装/可含税
询价
深圳市富芯乐电子科技有限公司
2SB15040QA
PANASONIC-SS
24+
NA
2826
只做原装正品现货 欢迎来电查询15919825718
询价
贸泽芯城（深圳）电子科技有限公司
2SB1504
PANASONIC/松下
23+
MT-3-AT1
4000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市一线半导体有限公司
2SB1502
HITACHI
24+
90000
询价
深圳市纳立科技有限公司
2SB1508R
三年内
1983
只做原装正品
询价
艾睿（深圳）半导体有限公司
2SB1514
ROHM/罗姆
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市安富世纪电子有限公司
2SB1502-P
PANASONIC/松下
23+
TO3PL
6000
专注配单,只做原装进口现货
询价
深圳市河锋鑫科技有限公司
2SB1502
MAT
22+
TO-3PL
6000
十年配单,只做原装
询价
深圳市博中泰实业有限公司
2SB1502
PANASONIC/松下
24+
TO-3L
60000
全新原装现货
询价

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2SB150规格书下载地址

2SB150参数引脚图相关

2SB150数据表相关新闻

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