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2SB150晶体管资料

  • 2SB150别名:2SB150三极管、2SB150晶体管、2SB150晶体三极管

  • 2SB150生产厂家:日本东芝公司

  • 2SB150制作材料:Ge-PNP

  • 2SB150性质:开关管 (S)

  • 2SB150封装形式:直插封装

  • 2SB150极限工作电压:105V

  • 2SB150最大电流允许值:0.04A

  • 2SB150最大工作频率:<1MHZ或未知

  • 2SB150引脚数:3

  • 2SB150最大耗散功率:0.05W

  • 2SB150放大倍数

  • 2SB150图片代号:C-47

  • 2SB150vtest:105

  • 2SB150htest:999900

  • 2SB150atest:0.04

  • 2SB150wtest:0.05

  • 2SB150代换 2SB150用什么型号代替:ACY39,2N2042,2N2043,3AX54D,

2SB150价格

参考价格:¥4.8234

型号:2SB15040QA 品牌:Panasonic Electronic Com 备注:这里有2SB150多少钱,2026年最近7天走势,今日出价,今日竞价,2SB150批发/采购报价,2SB150行情走势销售排行榜,2SB150报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

PANASONIC

松下

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -4A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A • Complement to Type 2SD2275 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VcE • Complement to Type 2SD2276 • Complement to Type 2SD2276 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications.

ISC

无锡固电

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

PANASONIC

松下

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications

SAVANTIC

Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping

PANASONIC

松下

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Current Switching Applications

50V/7A High-Current Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

SANYO

三洋

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2280 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

ISC

无锡固电

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

SANYO

三洋

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat) = -0 5(V){Max)@lc= -6A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type2SD2281 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2282 APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2282 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers, high-speed Inverters,converters

SAVANTIC

High-Current Switching Applications

Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Applications · Relay drivers, high-speed inverters, converters.

SANYO

三洋

Silicon PNP Power Transistors

文件:115.65 Kbytes Page:3 Pages

SAVANTIC

Power Device - Power Transistors - For Audio

PANASONIC

松下

Power Device - Power Transistors - Others

PANASONIC

松下

封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 50V 8A MT-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 50V 8A MT-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件:88.13 Kbytes Page:2 Pages

ROHM

罗姆

PNP Epitaxial Planar Silicon Transistors 50V/7A High-Current Switching Applications

ONSEMI

安森美半导体

Silicon PNP Power Transistors

文件:164.38 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:212.17 Kbytes Page:4 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:215.29 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:215.29 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:164.49 Kbytes Page:3 Pages

SAVANTIC

2SB150产品属性

  • 类型

    描述

  • Minimum DC Current Gain:

    5000@4000mA

  • Maximum Continuous DC Collector Current:

    5A

  • Maximum Collector Emitter Voltage:

    100V

  • Configuration:

    Single

更新时间:2026-5-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAYOU
23+
TO-3P
5880
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
ROHM/罗姆
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ROHM/罗姆
23+
SOT252
8000
只做原装现货
ROHM
最新
SOT-252
35689
原装进口现货库存专业工厂研究所配单供货
ROHM/罗姆
23+
SOT252
50000
全新原装正品现货,支持订货
onsemi(安森美)
25+
-
4606
样件支持,可原厂排单订货!
onsemi(安森美)
25+
-
4658
正规渠道,免费送样。支持账期,BOM一站式配齐
ROHM
2023+
TO-252
50000
原装现货

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