PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SB1430 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this transistor features a small resin-molded insulation type package, thus contributing to high-de

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA eq

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) APPLICATIONS • Designed for low-frequency power amplifiers and l

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drivers and solenoid drivers In such as OA and FA equipment

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B APPLICATIONS ·Designed for low-frequency power a

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation A

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -3mA) APPLICATIONS • Designed for low-frequency power amplifiers and lo

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insul • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE = −2 V, IC = −3 A)\n• Mold package that does not require an insulating board or insulation bushing;

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB1432 is a Darlington power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. In addition, a small resin-molded insula • High hFE due to Darlington connection hFE ≥ 1,000 @VCE = −2.0 V, IC = −10 A)\n• Mold package that does not require an insulation board or insulation bushing;

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drive

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid d

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For low-frequency output amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SD2166 • Low collector saturation voltage APPLICATIONS • For audio power amplifier applications

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Allowing supply with the radial taping.

Silicon PNP Power Transistors

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SILICON POWER TRANSISTOR

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PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

文件：257.73 Kbytes Page：8 Pages

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

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Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 2A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 2A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个