FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

[Isahaya] DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package.

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package. APPLICATION Power supply circuit, solenoid drive.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Complement to Type 2SD1977 APPLICATIONS • Audio frequency power amplifier applications • Recommend for 45-55W audio frequency amplifier output stage applications

isc Silicon PNP Power Transistor

DESCRIPTION • Darlington connection for high DC current gain • Built in resistor between base and emitter • Built in damper diode • Complementary NPN types:2SD2195/2SD1980 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

Power Transistor (−100V , −2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

Power Transistor (??00V,??A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

Power Transistor

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

Silicon PNP Power Transistor

DESCRIPTION • Good Linearity of hFE • Wide Area of Safe Operation • High DC Current-Gain Bandwidth Product • Complement to Type 2SD1975 APPLICATIONS • High power amplification • Optimum for the output stage of a Hi-Fi audio amplifier.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD1975 • Wide area of safe operation • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS • For high power amplification

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD1975 • Wide area of safe operation • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS • For high power amplification

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 ■ Features • Excellent collector current IC characteristics of forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Optimum for the output stage of a Hi-F

Darlington Transistor BUILT-IN DUMPER DIODE AT E-C

DESCRIPTION The 2SB1318 is a darlington transistor built-in dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver. FEATURES ● High DC Current Gain. ● Low Collector Saturation Voltage. ● Built-in a dumper diode at E-C.

Silicon PNP epitaxial planer type(For low-frequency power amplification)

Silicon PNP epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector current IC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP Power Transistors

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 100V 2A CPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

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