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2SB131晶体管资料

  • 2SB131别名:2SB131三极管、2SB131晶体管、2SB131晶体三极管

  • 2SB131生产厂家

  • 2SB131制作材料:Ge-PNP

  • 2SB131性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB131封装形式:直插封装

  • 2SB131极限工作电压:40V

  • 2SB131最大电流允许值:1.5A

  • 2SB131最大工作频率:<1MHZ或未知

  • 2SB131引脚数:2

  • 2SB131最大耗散功率:65W

  • 2SB131放大倍数

  • 2SB131图片代号:E-44

  • 2SB131vtest:40

  • 2SB131htest:999900

  • 2SB131atest:1.5

  • 2SB131wtest:65

  • 2SB131代换 2SB131用什么型号代替:AD139,2N2138,2N2143,

2SB131价格

参考价格:¥2.4913

型号:2SB1316TL 品牌:Rohm 备注:这里有2SB131多少钱,2026年最近7天走势,今日出价,今日竞价,2SB131批发/采购报价,2SB131行情走势销售排行榜,2SB131报价。
型号 功能描述 生产厂家 企业 LOGO 操作

FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

[Isahaya] DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package.

ETCList of Unclassifed Manufacturers

未分类制造商

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package. APPLICATION Power supply circuit, solenoid drive.

ISAHAYA

谏早电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Complement to Type 2SD1977 APPLICATIONS • Audio frequency power amplifier applications • Recommend for 45-55W audio frequency amplifier output stage applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • Darlington connection for high DC current gain • Built in resistor between base and emitter • Built in damper diode • Complementary NPN types:2SD2195/2SD1980 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

ISC

无锡固电

丝印代码:TL;Power Transistor (−100V , −2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

ROHM

罗姆

Power Transistor (??00V,??A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

ROHM

罗姆

Power Transistor

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

ROHM

罗姆

Silicon PNP Power Transistor

DESCRIPTION • Good Linearity of hFE • Wide Area of Safe Operation • High DC Current-Gain Bandwidth Product • Complement to Type 2SD1975 APPLICATIONS • High power amplification • Optimum for the output stage of a Hi-Fi audio amplifier.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD1975 • Wide area of safe operation • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS • For high power amplification

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD1975 • Wide area of safe operation • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS • For high power amplification

SAVANTIC

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 ■ Features • Excellent collector current IC characteristics of forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Optimum for the output stage of a Hi-F

PANASONIC

松下

Darlington Transistor BUILT-IN DUMPER DIODE AT E-C

DESCRIPTION The 2SB1318 is a darlington transistor built-in dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver. FEATURES ● High DC Current Gain. ● Low Collector Saturation Voltage. ● Built-in a dumper diode at E-C.

NEC

瑞萨

Silicon PNP epitaxial planer type(For low-frequency power amplification)

Silicon PNP epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector current IC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

PANASONIC

松下

Silicon PNP Power Transistors

文件:150.11 Kbytes Page:3 Pages

SAVANTIC

Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)

ROHM

罗姆

PNP High gain amplifier Transistor(Darlington)

ROHM

罗姆

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 100V 2A CPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

Power Device - Power Transistors - For Audio

PANASONIC

松下

Silicon PNP Power Transistors

文件:209.36 Kbytes Page:3 Pages

SAVANTIC

2SB131产品属性

  • 类型

    描述

  • VCEO (V):

    100

  • hFE min.:

    2000

  • hFE max.:

    15000

  • Pc (W):

    1

  • Production Status:

    EOL

更新时间:2026-5-15 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC
23+
TO92
20000
全新原装假一赔十
PAN
ATV
8553
一级代理 原装正品假一罚十价格优势长期供货
PANASONIC/松下
25+
NA
880000
明嘉莱只做原装正品现货
CJ/长电
21+
TO-92
30000
百域芯优势 实单必成 可开13点增值税发票
长电
25+23+
TO-92
24139
绝对原装正品全新进口深圳现货
MAT
24+
7450
CJ/长电
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
pan
25+
500000
行业低价,代理渠道
CJ/长电
24+
TO-92
50000
只做原装,欢迎询价,量大价优
PANASONIC/松下
25+
TO92L
90000
全新原装现货

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