PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFEhFE= 100 to 400 • Low VCE(sat) VCE(sat) ≤0.3 V

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon Epitaxial Transistor

■ Features ● High hFE hFE = 100 to 400 ● Low VCE(sat) VCE(sat) ≤ 0.3 V

isc Silicon PNP Power Transistors

DESCRIPTION • Low Collector Saturation Voltage • High Power Dissipation- : PC= 10W(Max)@TC=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in audio amplifier and switching, especially in hybrid integrated cir

SILICON POWER TRANSISTOR

文件：1.4266 Mbytes Page：7 Pages

TO-252-2L Plastic-Encapsulate Transistors

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PNP Silicon Epitaxial Transistors

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Silicon PNP transistor in a TO-252 Plastic Package.

文件：866.8 Kbytes Page：6 Pages

PNP Transistors

文件：1.08372 Mbytes Page：3 Pages

PNP SILICON EPITAXIAL TRANSISTOR

文件：1.4266 Mbytes Page：7 Pages

PNP Transistors

文件：1.08372 Mbytes Page：3 Pages

PNP Transistors

文件：1.08372 Mbytes Page：3 Pages

PNP Transistors

文件：1.08372 Mbytes Page：3 Pages

isc Silicon PNP Power Transistors

文件：271.87 Kbytes Page：2 Pages

Low Collector Saturation Voltage

文件：97.46 Kbytes Page：2 Pages