PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFEhFE= 100 to 400 • Low VCE(sat) VCE(sat) ≤0.3 V

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon Epitaxial Transistor

■ Features ● High hFE hFE = 100 to 400 ● Low VCE(sat) VCE(sat) ≤ 0.3 V

isc Silicon PNP Power Transistors

DESCRIPTION • Low Collector Saturation Voltage • High Power Dissipation- : PC= 10W(Max)@TC=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in audio amplifier and switching, especially in hybrid integrated cir

SILICON POWER TRANSISTOR

文件：1.4266 Mbytes Page：7 Pages

晶体管

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PNP SILICON EPITAXIAL TRANSISTOR

文件：1.4266 Mbytes Page：7 Pages

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文件：1.08372 Mbytes Page：3 Pages

PNP Transistors

文件：1.08372 Mbytes Page：3 Pages

PNP Transistors

文件：1.08372 Mbytes Page：3 Pages

isc Silicon PNP Power Transistors

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Low Collector Saturation Voltage

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