位置：首页 > IC中文资料 > 2SB1260-R/Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733. | ROHMRohm 罗姆罗姆半导体集团 |  |   | |
PNPPlastic-EncapsulateTransistor PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free | WEITRON Weitron Technology |  | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 |  | | |
PowerTransistor(−80V,−1A) 文件：97.68 Kbytes Page：4 Pages | ROHMRohm 罗姆罗姆半导体集团 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
21+ |
SOT-89 |
5215 |
只做原装,假一罚十 |
|||
UTC(友顺) |
24+/25+ |
SOT-89 |
4000 |
UTC原厂一级代理商,价格优势! |
|||
ROHM |
23+ |
SOT-89 |
63000 |
原装正品现货 |
|||
ROHMCJ |
2024 |
SOT-89 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
Bychip/百域芯 |
21+ |
SOT-89 |
30000 |
实单必成 质强价优 可开13点增值税 |
|||
ROHM |
23+ |
SOT89 |
11092 |
||||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
UTC/友顺 |
24+ |
NA/ |
11000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM/罗姆 |
2223+ |
SOT-89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ROHM |
1216+ |
SOT |
3218 |
原装现货海量库存欢迎咨询 |
2SB1260-R/Q芯片相关品牌
2SB1260-R/Q规格书下载地址
2SB1260-R/Q参数引脚图相关
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2SB1260-R/Q数据表相关新闻
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2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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