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2SB125晶体管资料

  • 2SB125别名:2SB125三极管、2SB125晶体管、2SB125晶体三极管

  • 2SB125生产厂家:日本东芝公司

  • 2SB125制作材料:Ge-PNP

  • 2SB125性质:开关管 (S)_功率放大 (L)

  • 2SB125封装形式

  • 2SB125极限工作电压:36V

  • 2SB125最大电流允许值:15A

  • 2SB125最大工作频率:<1MHZ或未知

  • 2SB125引脚数

  • 2SB125最大耗散功率:40W

  • 2SB125放大倍数

  • 2SB125图片代号:NO

  • 2SB125vtest:36

  • 2SB125htest:999900

  • 2SB125atest:15

  • 2SB125wtest:40

  • 2SB125代换 2SB125用什么型号代替:2N1549,2N1550,2N1551,2N1552,2N1553,2N1554,2N1555,2N1556,2N1557,2N1558,2N1559,2N1560,2N2078,2N2082,3AD56A,

2SB125价格

参考价格:¥5.8045

型号:2SB12520Q 品牌:Panasonic 备注:这里有2SB125多少钱,2026年最近7天走势,今日出价,今日竞价,2SB125批发/采购报价,2SB125行情走势销售排行榜,2SB125报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 ■ Features ● Optimum for 35W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

PANASONIC

松下

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

PANASONIC

松下

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC CurrentGain- : hFE= 5000(Min)@lc= -5A • Low-Collector SaturationVoltage- : VCE(sat)= -2.5V(Max.)@lc= -5A • Complementto Type 2SD1893 APPLICATIONS • Designed for power amplifierapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD1894 ■Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat):

PANASONIC

松下

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification

ISC

无锡固电

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 90W Hi-Fi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SD1895 APPLICATIONS • Power amplification

SAVANTIC

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 90W Hi-Fi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SD1895 APPLICATIONS • Power amplification

ISC

无锡固电

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 90W Hi-Fi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SD1895 APPLICATIONS • Power amplification

JMNIC

锦美电子

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

PANASONIC

松下

Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose

SANKEN

三垦

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2014 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2014 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2014 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V,BR)CEo= -60V(Min) • High DC Current Gain- : hFt= 2000(Min)@lc= -3A • Complement to Type 2SD2014 APPLICATIONS • Driver for solenoid, relay and motor and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD1785 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD1785 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD1785 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose

JMNIC

锦美电子

Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application : Driver for Solenoid, Relay and Motor and General Purpose

SANKEN

三垦

For power amplification

PANASONIC

松下

Power Device - Power Transistors - For Audio

PANASONIC

松下

Silicon PNP epitaxial planar type Darlington(For power amplification)

PANASONIC

松下

isc Silicon PNP Darlington Power Transistor

文件:189.41 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon PNP Darlington Power Transistor

文件:265.4 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:120.3 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

文件:134.13 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:160.55 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:160.55 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:124.26 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

文件:134.16 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Darlington Power Transistors

文件:168.19 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

文件:168.19 Kbytes Page:3 Pages

JMNIC

锦美电子

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件:88.13 Kbytes Page:2 Pages

ROHM

罗姆

丝印代码:T103;TRANSISTORS TO 92L TO-92LS MRT

文件:195.39 Kbytes Page:2 Pages

ROHM

罗姆

Silicon PNP Power Transistors

文件:215.38 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Epitaxial Planar Transistor

文件:36.46 Kbytes Page:1 Pages

SANKEN

三垦

封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 60V 4A TO220F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

SANKEN

三垦

Silicon PNP Epitaxial Planar Transistor

文件:35.99 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Power Transistors

文件:152.98 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:152.98 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:215.31 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 100V 6A TO220F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

SANKEN

三垦

Silicon PNP Epitaxial Planar Transistor

文件:36.02 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Epitaxial Planar Transistor

文件:35.55 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Power Transistors

文件:153.07 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:153.07 Kbytes Page:3 Pages

JMNIC

锦美电子

isc Silicon PNP Darlington Power Transistor

文件:267.57 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Epitaxial Planar Transistor

文件:36.52 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

文件:26.07 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Darlington Power Transistor

文件:128.44 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Epitaxial Planar Transistor

文件:36.05 Kbytes Page:1 Pages

SANKEN

三垦

2SB125产品属性

  • 类型

    描述

  • IC:

    -4A

  • PC:

    25W

  • hFEmin:

    2000

  • hFE条件VCE:

    -4V

  • hFE条件IC:

    -3A

  • VCE(sat)max:

    -1.5V

  • 配对:

    2SD2014

更新时间:2026-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
23+
NA
5000
全新原装假一赔十
SANKEN
2026+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
SANKEN
25+
NA
880000
明嘉莱只做原装正品现货
SANKEN
25+
TO220
9800
全新原装现货,假一赔十
松下
22+
TO-3P
20000
公司只有原装 品质保证
PANASONIC
09+
TO-3P
195
全新 发货1-2天
SANKE
24+
TO220F
21574
郑重承诺只做原装进口现货
24+
TO-220F
10000
全新
ROHM
TO-92L
8553
一级代理 原装正品假一罚十价格优势长期供货
松下
09+
TO-3P
7900
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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