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2SB125晶体管资料
2SB125别名：2SB125三极管、2SB125晶体管、2SB125晶体三极管
2SB125生产厂家：日本东芝公司
2SB125制作材料：Ge-PNP
2SB125性质：开关管 （S）_功率放大 （L）
2SB125封装形式：
2SB125极限工作电压：36V
2SB125最大电流允许值：15A
2SB125最大工作频率：<1MHZ或未知
2SB125引脚数：
2SB125最大耗散功率：40W
2SB125放大倍数：
2SB125图片代号：NO
2SB125vtest：36
2SB125htest：999900
- 2SB125atest：15
2SB125wtest：40
2SB125代换 2SB125用什么型号代替：2N1549,2N1550,2N1551,2N1552,2N1553,2N1554,2N1555,2N1556,2N1557,2N1558,2N1559,2N1560,2N2078,2N2082,3AD56A,
2SB125价格
参考价格：￥5.8045
型号：2SB12520Q 品牌：Panasonic 备注：这里有2SB125多少钱，2025年最近7天走势，今日出价，今日竞价，2SB125批发/采购报价，2SB125行情走势销售排行榜，2SB125报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 ■ Features ● Optimum for 35W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 |   | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • High DC CurrentGain- : hFE= 5000(Min)@lc= -5A • Low-Collector SaturationVoltage- : VCE(sat)= -2.5V(Max.)@lc= -5A • Complementto Type 2SD1893 APPLICATIONS • Designed for power amplifierapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) For power amplification Complementary to 2SD1894 ■Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PFa package • Optimum for 90W Hi-Fi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SD1895 APPLICATIONS • Power amplification | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PFa package • Optimum for 90W Hi-Fi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SD1895 APPLICATIONS • Power amplification | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PFa package • Optimum for 90W Hi-Fi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SD1895 APPLICATIONS • Power amplification | JMNIC 锦美电子 | | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | | ||
Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose | Sanken 三垦 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2014 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2014 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2014 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V,BR)CEo= -60V(Min) • High DC Current Gain- : hFt= 2000(Min)@lc= -3A • Complement to Type 2SD2014 APPLICATIONS • Driver for solenoid, relay and motor and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD1785 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD1785 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD1785 • High DC current gain • DARLINGTON APPLICATIONS • Driver for solenoid ,relay and motor and general purpose | JMNIC 锦美电子 | | ||
Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application : Driver for Solenoid, Relay and Motor and General Purpose | Sanken 三垦 | | ||
For power amplification | Panasonic 松下 | | ||
Power Device - Power Transistors - For Audio | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) | Panasonic 松下 | | ||
isc Silicon PNP Darlington Power Transistor 文件：189.41 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc Silicon PNP Darlington Power Transistor 文件：265.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon PNP Power Transistors 文件：120.3 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistor 文件：134.13 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：160.55 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：160.55 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistor 文件：134.16 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：124.26 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors 文件：168.19 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistors 文件：168.19 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件：88.13 Kbytes Page：2 Pages | ROHM 罗姆 | | ||
TRANSISTORS TO 92L TO-92LS MRT 文件：195.39 Kbytes Page：2 Pages | ROHM 罗姆 | | ||
Silicon PNP Power Transistors 文件：215.38 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Epitaxial Planar Transistor 文件：36.46 Kbytes Page：1 Pages | Sanken 三垦 | | ||
封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 60V 4A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Sanken 三垦 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：35.99 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Power Transistors 文件：152.98 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：152.98 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：215.31 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 100V 6A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Sanken 三垦 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：36.02 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：35.55 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Power Transistors 文件：153.07 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：153.07 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
isc Silicon PNP Darlington Power Transistor 文件：267.57 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：36.52 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose) 文件：26.07 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Darlington Power Transistor 文件：128.44 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：36.05 Kbytes Page：1 Pages | Sanken 三垦 | |
2SB125产品属性
- 类型
描述
- 型号
2SB125
- 功能描述
TRANS PNP 100VCEO 5A TO-220F
- RoHS
是
- 类别
分离式半导体产品 >> 晶体管(BJT) - 单路
- 系列
-
- 标准包装
1
- 系列
-
- 晶体管类型
NPN 电流 -
- 集电极(Ic)（最大）
1A 电压 -
- 集电极发射极击穿（最大）
30V
- Ib、Ic条件下的Vce饱和度（最大）
200mV @ 100mA，1A 电流 -
- 集电极截止（最大）
100nA 在某 Ic、Vce
- 时的最小直流电流增益(hFE)
300 @ 500mA，5V 功率 -
- 最大
710mW 频率 -
- 转换
100MHz
- 安装类型
表面贴装
- 封装/外壳
TO-236-3，SC-59，SOT-23-3
- 供应商设备封装
SOT-23-3（TO-236）
- 包装
Digi-Reel®
- 其它名称
MMBT489LT1GOSDKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
7800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
23+ |
NA |
5000 |
全新原装假一赔十 |
|||
ROHM |
TO-92L |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SANKEN |
25+ |
TO220 |
9800 |
全新原装现货,假一赔十 |
|||
SANKEN |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
24+ |
TO-220F |
10000 |
全新 |
||||
PANASINAC |
2023+ |
3000 |
进口原装现货 |
||||
松下 |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
Panasonic Electronic Component |
25+ |
TO-220-3 整包 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
松下 |
09+ |
TO-3P |
7900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SB125芯片相关品牌
2SB125规格书下载地址
2SB125参数引脚图相关
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- 2SB1259
- 2SB1258
- 2SB1257
- 2SB1256
- 2SB1255
- 2SB1254
- 2SB1253
- 2SB1252
- 2SB1251
- 2SB1250
- 2SB1249
- 2SB1248
- 2SB1247
- 2SB1246
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- 2SB1227
- 2SB1226
- 2SB1225
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2SB125数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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