PNP Silicon Epitaxial Planar Transistor

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PNP Silicon Epitaxial Planar Transistor

Silicon PNP Epitaxial Planar Type

Features • High forward current transfer ratio hFE.

PNP Silicon Epitaxial Paner Transistors

FEATURES • High DC Current Gain • Complementary to 2SD1819A APPLICATIONS • General Purpose Amplification

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: -100 mA Collector-base voltage V(BR)CBO: -45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR(PNP)

FEATURES • High DC Current Gain • Complementary to 2SD1819A APPLICATIONS • General Purpose Amplification

Silicon PNP epitaxial planer type

For general amplification Complementary to 2SD1819A ■ Features ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.