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2SB114晶体管资料

  • 2SB114别名：2SB114三极管、2SB114晶体管、2SB114晶体三极管

  • 2SB114生产厂家：日本日电公司

  • 2SB114制作材料：Ge-PNP

  • 2SB114性质：低频或音频放大 （LF）

  • 2SB114封装形式：直插封装

  • 2SB114极限工作电压：25V

  • 2SB114最大电流允许值：0.05A

  • 2SB114最大工作频率：<1MHZ或未知

  • 2SB114引脚数：3

  • 2SB114最大耗散功率：0.1W

  • 2SB114放大倍数：β>45

  • 2SB114图片代号：C-47

  • 2SB114vtest：25

  • 2SB114htest：999900

  • 2SB114atest：0.05

  • 2SB114wtest：0.1

  • 2SB114代换 2SB114用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX51B,

2SB114价格

参考价格：￥1.6081

型号：2SB1143S 品牌：ON 备注：这里有2SB114多少钱，2025年最近7天走势，今日出价，今日竞价，2SB114批发/采购报价，2SB114行情走势销售排行榜，2SB114报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SB1140

20V/5A Switching Applications

PNP Epiaxial Plannar Silicon Transisor 20V / 5A Switching Applicaions Features Adoption of FBET, MBIT processes Low saturation voltage Large current capacity Fast switching speed Applications Strobe, power, supplies, relay, relay drivers, lamp drivers

SANYO

三洋

2SB1141

18V/1.2A Switching Applications

18V/1.2A Switching Applications Features · Low saturation voltage and excellent linearity of hFE. · Wide ASO. Applications · Converters, relay drivers, low-voltage and high power AF Amplifier.

SANYO

三洋

2SB1142

50V/2.5A High-Speed Switching Applications

50V / 2.5A High-Speed Switching Applications Features • Adoption of FBET and MBIT processes. • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers.

SANYO

三洋

2SB1143

50V/4A Switching Applications

Features • Adoption of FBET, MBIT processes. • Low saturation voltage. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

2SB1143

Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML

Features • Adoption of FBET, MBIT processes • Low saturation voltage • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SB1143S

Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML

Features • Adoption of FBET, MBIT processes • Low saturation voltage • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SB1143S

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Low saturation voltage • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SB1143T

Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML

Features • Adoption of FBET, MBIT processes • Low saturation voltage • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SB1143T

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Low saturation voltage • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SB1144

isc Silicon PNP Power Transistor

DESCRIPTION •·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Max)@IC= -0.5A • Wide Area of Safe Operation • Complement to Type 2SD1684 APPLICATIONS • Designed for 100V/1.5A Switching Applications

ISC

无锡固电

2SB1144

100V/1.5A Switching Applications

Features • Adoption of FBET and MBIT processes. • High breakdown voltage. • Low saturation voltage. • Plastic-covered heat sink facilitating high-density mounting.

SANYO

三洋

2SB1145

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain. • DARLINGTON • Low collector saturation voltage APPLICATIONS • For high current driver and power driver applications

ISC

无锡固电

2SB1145

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain. • DARLINGTON • Low collector saturation voltage APPLICATIONS • For high current driver and power driver applications

JMNIC

锦美电子

2SB1145

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain. • DARLINGTON • Low collector saturation voltage APPLICATIONS • For high current driver and power driver applications

SAVANTIC

2SB1148

Silicon PNP epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SD1752 and 2SD1752A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

Panasonic

松下

2SB1148

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB1148

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB1148-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB1148-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SB1148A

Silicon PNP epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SD1752 and 2SD1752A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

Panasonic

松下

2SB1149

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver

ISC

无锡固电

2SB1149

Suitable for use to operate from IC without Predriver, such as hammer driver

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SB1149

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver

SAVANTIC

2SB1149

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver

JMNIC

锦美电子

2SB114040MLYY

肖特基二极管芯片

SILAN

士兰微

2SB1140-R

中等功率双极型晶体管

MCC

2SB1140-R

PNP Plastic-Encapsulate Transistors

文件：116.04 Kbytes Page：2 Pages

MCC

2SB1140-R

PNP Plastic-Encapsulate Transistors

文件：241.8 Kbytes Page：2 Pages

MCC

2SB1140-R_13

PNP Plastic-Encapsulate Transistors

文件：241.8 Kbytes Page：2 Pages

MCC

2SB1140-S

PNP Plastic-Encapsulate Transistors

文件：241.8 Kbytes Page：2 Pages

MCC

2SB1140-S

PNP Plastic-Encapsulate Transistors

文件：116.04 Kbytes Page：2 Pages

MCC

2SB1140-S

中等功率双极型晶体管

MCC

2SB1140-S-TP

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

2SB1143

50V/4A Switching Applications

文件：422.97 Kbytes Page：7 Pages

SANYO

三洋

2SB1143S

50V/4A Switching Applications

文件：422.97 Kbytes Page：7 Pages

SANYO

三洋

2SB1143S

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 50V 4A TO126ML 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

2SB1143T

50V/4A Switching Applications

文件：422.97 Kbytes Page：7 Pages

SANYO

三洋

2SB1145

Silicon PNP Power Transistors

文件：204.63 Kbytes Page：3 Pages

SAVANTIC

2SB1145_15

Silicon PNP Power Transistors

文件：151.53 Kbytes Page：3 Pages

JMNIC

锦美电子

2SB1145_2014

Silicon PNP Power Transistors

文件：151.53 Kbytes Page：3 Pages

JMNIC

锦美电子

2SB1149

Silicon PNP Power Transistors

文件：115.26 Kbytes Page：3 Pages

SAVANTIC

2SB1149_15

Silicon PNP Power Transistors

文件：160.55 Kbytes Page：3 Pages

JMNIC

锦美电子

2SB1149_2014

Silicon PNP Power Transistors

文件：160.55 Kbytes Page：3 Pages

JMNIC

锦美电子

2SB114产品属性

  • 类型

    描述

  • 型号

    2SB114

  • 功能描述

    5 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126

2SB114供应商更多...

更新时间：2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SB1148A
PANASON/松下
24+
NA/
534
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市金芯世纪电子有限公司
2SB1149
NEC
22+
TO126
100000
代理渠道/只做原装/可含税
询价
深圳市赛特兴科技有限公司
2SB115
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
深圳市豪迈兴电子有限公司
2SB1149
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市振宏微科技有限公司
2SB1148A-P,2SC4396-TL,MFK1907B25Z
TO-263
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市中飞凌科技有限公司
2SB115
ST
26+
CAN to-39
60000
只有原装 可配单
询价
深圳市一线半导体有限公司
2SB1148A-P
Panasonic/松下
24+
TO-263
8200
新进库存/原装
询价
深圳市科恒伟业电子有限公司
2SB1149
NEC
2450+
TO-126
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市宏捷佳电子科技有限公司
2SB1148A-P
Panasoni
2023+
TO-252
50000
原装现货
询价
深圳市创新迹电子有限公司
2SB1148A
松下
22+
TO-252
20000
公司只有原装 品质保证
询价

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  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号

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DdatasheetPDF页码索引

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