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2SB107晶体管资料

2SB107别名：2SB107三极管、2SB107晶体管、2SB107晶体三极管
2SB107生产厂家：日本日电公司
2SB107制作材料：Ge-PNP
2SB107性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB107封装形式：直插封装
2SB107极限工作电压：30V
2SB107最大电流允许值：2A
2SB107最大工作频率：<1MHZ或未知
2SB107引脚数：2
2SB107最大耗散功率：10W
2SB107放大倍数：
2SB107图片代号：E-44
2SB107vtest：30
2SB107htest：999900
2SB107atest：2
2SB107wtest：10

2SB107代换 2SB107用什么型号代替：AD149,AD166,2N2137,2N2142,2SB4493AD50A,

型号	功能描述	生产厂家企业	LOGO
2SB1070	For Low-Voltage Switching Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment	Panasonic 松下	Panasonic
2SB1070A	Silicon PNP Epitaxial Planar Type Features ● Low collector-emitter saturation voltage VCE(sat). ● High-speed switching.	KEXIN 科信电子	KEXIN
2SB1071	Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@lc= -2A • High Speed Switching APPLICATIONS • Designed for low-voltage switching applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1071	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications	SAVANTIC	SAVANTIC
2SB1071	Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw	Panasonic 松下	Panasonic
2SB1071	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications	ISC 无锡固电	ISC
2SB1071	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications	JMNIC 锦美电子	JMNIC
2SB1071A	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications	JMNIC 锦美电子	JMNIC
2SB1071A	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications	ISC 无锡固电	ISC
2SB1071A	Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw	Panasonic 松下	Panasonic
2SB1071A	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications	SAVANTIC	SAVANTIC
2SB1072	Silicon PNP Triple Diffused Application Medium speed power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1072L	Silicon PNP Triple Diffused Application Medium speed power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1072L	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ·Medium speed power amplifier	ISC 无锡固电	ISC
2SB1072S	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ·Medium speed power amplifier	ISC 无锡固电	ISC
2SB1072S	Silicon PNP Triple Diffused Application Medium speed power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1073	Silicon PNP epitaxial planer type(For low-frequency amplification) Silicon PNP epitaxial planar type For low-frequency amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current ICP • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine	Panasonic 松下	Panasonic
2SB1073	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC	JIANGSU 长电科技	JIANGSU
2SB1073	PNP Epitaxial Planar Silicon Transistors FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Large peak collector current ICP. ● Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	BILIN 银河微电	BILIN
2SB1073	TRANSISTOR FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC	HTSEMI 金誉半导体	HTSEMI
2SB1073	Low collector-emitter saturation voltage VCE(sat) FEATURES • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current IC	MAKOSEMI 美科半导体	MAKOSEMI
2SB1073	SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLAS 威伦电子	WILLAS
2SB1073	Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current IC	HOTTECH 合科泰	HOTTECH
2SB1073	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC	DGNJDZ 南晶电子	DGNJDZ
2SB1073	Silicon PNP Epitaxial Planar Type Features ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current ICP ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	KEXIN 科信电子	KEXIN
2SB1075	Silicon PNP Power Transistor DESCRIPTION • High Collector Current -lc= -2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) • Good Linearity of hFE • Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max.)@lc=-3A APPLICATIONS • Designed for AF output amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1075	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High collector-peak current • Low collector saturation voltage APPLICATIONS • For audio frequency output amplifier applications	SAVANTIC	SAVANTIC
2SB1075	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High collector-peak current • Low collector saturation voltage APPLICATIONS • For audio frequency output amplifier applications	ISC 无锡固电	ISC
2SB1075	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High collector-peak current • Low collector saturation voltage APPLICATIONS • For audio frequency output amplifier applications	JMNIC 锦美电子	JMNIC
2SB1077	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Silicon NPN triple diffused • Low Collector-Emitter Saturation Voltage • Complement to Type 2SD1558 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low frequency power amplifier	ISC 无锡固电	ISC
2SB1077	LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1588	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1079	Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1079	isc Silicon PNP Darlington Power Transistor Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain-: hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS ·Designed for low frequency power amplifier applications.	ISC 无锡固电	ISC
2SB1070_15	PNP Transistors 文件：1.0025 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1070A_15	PNP Transistors 文件：1.00151 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1070A-P	PNP Transistors 文件：1.00151 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1070A-Q	PNP Transistors 文件：1.00151 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1070-P	PNP Transistors 文件：1.0025 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1070-Q	PNP Transistors 文件：1.0025 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1071	Silicon PNP Power Transistors 文件：118.33 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1071	Silicon PNP epitaxial planar type	Panasonic 松下	Panasonic
2SB1071_15	Silicon PNP Power Transistors 文件：170.19 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1071_2014	Silicon PNP Power Transistors 文件：170.19 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1071A	Silicon PNP Power Transistors 文件：118.33 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1072	Silicon PNP Triple Diffused	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1072(S)	Bipolar power switching Darlington transistor	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1073	PNP Epitaxial Planar Silicon Transistors 文件：234.96 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SB1073_15	PNP Transistors 文件：744.74 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1073_17	PNP Epitaxial Planar Silicon Transistors 文件：234.96 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SB1073-HF_15	PNP Transistors 文件：891.51 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1073-Q	PNP Transistors 文件：744.74 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1073-Q	Silicon PNP epitaxial planer Transistors 文件：219.43 Kbytes Page：3 Pages	MCC	MCC
2SB1073-Q	Silicon PNP epitaxial planer Transistors 文件：205.42 Kbytes Page：3 Pages	MCC	MCC
2SB1073-Q_13	Silicon PNP epitaxial planer Transistors 文件：219.43 Kbytes Page：3 Pages	MCC	MCC
2SB1073-Q-AP	封装/外壳：TO-243AA 包装：带盒（TB）描述：TRANS PNP 20V 4A SOT89 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1073-Q-HF	PNP Transistors 文件：891.51 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1073-R	PNP Transistors 文件：744.74 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1073-R	Silicon PNP epitaxial planer Transistors 文件：205.42 Kbytes Page：3 Pages	MCC	MCC
2SB1073-R	Silicon PNP epitaxial planer Transistors 文件：219.43 Kbytes Page：3 Pages	MCC	MCC
2SB1073-R-AP	封装/外壳：TO-243AA 包装：带盒（TB）描述：TRANS PNP 20V 4A SOT89 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC

2SB107产品属性

类型
描述
型号
2SB107
制造商
PANASONIC
制造商全称
Panasonic Semiconductor
功能描述
For Low-Voltage Switching

2SB107供应商更多...

更新时间：2025-12-25 12:05:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SB1073	PASONIC	2023+	SOT-89	58000	进口原装,现货热卖	询价
深圳市盈慧通电子有限公司	2SB1073	CJ/长晶	2511	SOT-89	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
贸泽芯城（深圳）电子科技有限公司	2SB1072-Z-E1	NEC	23+	SOT252	9000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市得捷芯城科技有限公司	2SB1073	CJ/长电	24+	NA/	15250	原装现货,当天可交货,原型号开票	询价
现代芯城（深圳）科技有限公司	2SB1072STR-E		24+	N/A	52000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛美科科技有限公司	2SB1072-TR	原厂原装		ROHS	13352	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市威尔健半导体有限公司	2SB1072-L	AO	23+	TO263	69820	终端可以免费供样,支持BOM配单!	询价
艾睿（深圳）半导体有限公司	2SB1073	CJ(江苏长电/长晶)	2447	SOT-89(SOT-89-3)	105000	1000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市莱克讯科技有限公司	2SB10730Q1TV	PANASONIC	1922+	SOT-89	35689	原装进口现货库存专业工厂研究所配单供货	询价
深圳市华斯顿科技有限公司	2SB1073	长电	25+23+	SOT-89	24283	绝对原装正品全新进口深圳现货	询价

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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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DdatasheetPDF页码索引

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2SB107晶体管资料

2SB107产品属性

2SB107供应商更多...

2SB107芯片相关品牌

2SB107规格书下载地址

2SB107参数引脚图相关

2SB107数据表相关新闻

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引