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位置：首页 > IC中文资料 > 2SB107

2SB107晶体管资料

  • 2SB107别名：2SB107三极管、2SB107晶体管、2SB107晶体三极管

  • 2SB107生产厂家：日本日电公司

  • 2SB107制作材料：Ge-PNP

  • 2SB107性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB107封装形式：直插封装

  • 2SB107极限工作电压：30V

  • 2SB107最大电流允许值：2A

  • 2SB107最大工作频率：<1MHZ或未知

  • 2SB107引脚数：2

  • 2SB107最大耗散功率：10W

  • 2SB107放大倍数：

  • 2SB107图片代号：E-44

  • 2SB107vtest：30

  • 2SB107htest：999900

  • 2SB107atest：2

  • 2SB107wtest：10

  • 2SB107代换 2SB107用什么型号代替：AD149,AD166,2N2137,2N2142,2SB4493AD50A,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB1070

For Low-Voltage Switching

Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment

PANASONIC

松下

2SB1070A

Silicon PNP Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● High-speed switching.

KEXIN

科信电子

2SB1071

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications

SAVANTIC

2SB1071

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw

PANASONIC

松下

2SB1071

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications

JMNIC

锦美电子

2SB1071

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications

ISC

无锡固电

2SB1071

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@lc= -2A • High Speed Switching APPLICATIONS • Designed for low-voltage switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1071A

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications

SAVANTIC

2SB1071A

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications

ISC

无锡固电

2SB1071A

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw

PANASONIC

松下

2SB1071A

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching APPLICATIONS • For low voltage switching applications

JMNIC

锦美电子

2SB1072

Silicon PNP Triple Diffused

Application Medium speed power amplifier

HITACHIHitachi Semiconductor

日立日立公司

2SB1072L

Silicon PNP Triple Diffused

Application Medium speed power amplifier

HITACHIHitachi Semiconductor

日立日立公司

2SB1072L

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ·Medium speed power amplifier

ISC

无锡固电

2SB1072S

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ·Medium speed power amplifier

ISC

无锡固电

2SB1072S

Silicon PNP Triple Diffused

Application Medium speed power amplifier

HITACHIHitachi Semiconductor

日立日立公司

2SB1073

Silicon PNP epitaxial planer type(For low-frequency amplification)

Silicon PNP epitaxial planar type For low-frequency amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current ICP • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

PANASONIC

松下

2SB1073

Silicon PNP Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current ICP ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

KEXIN

科信电子

2SB1073

TRANSISTOR

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC

HTSEMI

金誉半导体

2SB1073

丝印代码：IQ；PNP Epitaxial Planar Silicon Transistors

FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Large peak collector current ICP. ● Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

BILIN

银河微电

2SB1073

Low collector-emitter saturation voltage VCE(sat)

FEATURES • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current IC

MAKOSEMI

美科半导体

2SB1073

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC

JIANGSU

长电科技

2SB1073

Plastic-Encapsulate Transistors

FEATURES • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current IC

HOTTECH

合科泰

2SB1073

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

WILLAS

威伦电子

2SB1073

丝印代码：IQ；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC

DGNJDZ

南晶电子

2SB1075

Silicon PNP Power Transistor

DESCRIPTION • High Collector Current -lc= -2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) • Good Linearity of hFE • Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max.)@lc=-3A APPLICATIONS • Designed for AF output amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1075

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High collector-peak current • Low collector saturation voltage APPLICATIONS • For audio frequency output amplifier applications

ISC

无锡固电

2SB1075

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High collector-peak current • Low collector saturation voltage APPLICATIONS • For audio frequency output amplifier applications

JMNIC

锦美电子

2SB1075

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High collector-peak current • Low collector saturation voltage APPLICATIONS • For audio frequency output amplifier applications

SAVANTIC

2SB1077

LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558

SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1588

HITACHIHitachi Semiconductor

日立日立公司

2SB1077

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Silicon NPN triple diffused • Low Collector-Emitter Saturation Voltage • Complement to Type 2SD1558 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low frequency power amplifier

ISC

无锡固电

2SB1079

isc Silicon PNP Darlington Power Transistor

Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain-: hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

2SB1079

Silicon PNP Triple Diffused

Application Low frequency power amplifier complementary pair with 2SD1559

HITACHIHitachi Semiconductor

日立日立公司

2SB1070_15

PNP Transistors

文件：1.0025 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1070A_15

PNP Transistors

文件：1.00151 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1070A-P

PNP Transistors

文件：1.00151 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1070A-Q

PNP Transistors

文件：1.00151 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1070-P

PNP Transistors

文件：1.0025 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1070-Q

PNP Transistors

文件：1.0025 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1071

Silicon PNP epitaxial planar type

PANASONIC

松下

2SB1071

Silicon PNP Power Transistors

文件：118.33 Kbytes Page：3 Pages

SAVANTIC

2SB1071_15

Silicon PNP Power Transistors

文件：170.19 Kbytes Page：3 Pages

JMNIC

锦美电子

2SB1071_2014

Silicon PNP Power Transistors

文件：170.19 Kbytes Page：3 Pages

JMNIC

锦美电子

2SB1071A

Silicon PNP Power Transistors

文件：118.33 Kbytes Page：3 Pages

SAVANTIC

2SB1072

Silicon PNP Triple Diffused

HITACHIHitachi Semiconductor

日立日立公司

2SB1072(S)

Bipolar power switching Darlington transistor

HITACHIHitachi Semiconductor

日立日立公司

2SB1073

丝印代码：IQ；PNP Epitaxial Planar Silicon Transistors

文件：234.96 Kbytes Page：4 Pages

BILIN

银河微电

2SB1073_15

PNP Transistors

文件：744.74 Kbytes Page：2 Pages

KEXIN

科信电子

2SB1073_17

PNP Epitaxial Planar Silicon Transistors

文件：234.96 Kbytes Page：4 Pages

BILIN

银河微电

2SB1073-HF_15

PNP Transistors

文件：891.51 Kbytes Page：2 Pages

KEXIN

科信电子

2SB1073-Q

PNP Transistors

文件：744.74 Kbytes Page：2 Pages

KEXIN

科信电子

2SB1073-Q

Silicon PNP epitaxial planer Transistors

文件：219.43 Kbytes Page：3 Pages

MCC

2SB1073-Q

丝印代码：IQ；Silicon PNP epitaxial planer Transistors

文件：205.42 Kbytes Page：3 Pages

MCC

2SB1073-Q_13

Silicon PNP epitaxial planer Transistors

文件：219.43 Kbytes Page：3 Pages

MCC

2SB1073-Q-AP

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 4A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

2SB1073-Q-HF

PNP Transistors

文件：891.51 Kbytes Page：2 Pages

KEXIN

科信电子

2SB1073-R

PNP Transistors

文件：744.74 Kbytes Page：2 Pages

KEXIN

科信电子

2SB1073-R

丝印代码：IR；Silicon PNP epitaxial planer Transistors

文件：205.42 Kbytes Page：3 Pages

MCC

2SB1073-R

Silicon PNP epitaxial planer Transistors

文件：219.43 Kbytes Page：3 Pages

MCC

2SB1073-R-AP

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 4A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

2SB107产品属性

  • 类型

    描述

  • PCM(W)：

    0.5

  • IC(A)：

    4

  • VCBO(V)：

    30

  • VCEO(V)：

    20

  • VEBO(V)：

    7

  • hFEMin：

    120

  • hFEMax：

    315

  • hFE@VCE(V)：

    2

  • hFE@IC(A)：

    2

  • VCE(sat)(V)：

    1

  • VCE(sat)\u001E@IC(A)：

    3

  • VCE(sat)\u001E@IB(A)：

    0.1

  • Package：

    SOT-89

2SB107供应商更多...

更新时间：2026-5-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
贸泽芯城（深圳）电子科技有限公司
2SB1079
RENESAS/瑞萨
23+
30000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
现代芯城（深圳）科技有限公司
2SB1079-E
26+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市赛特兴科技有限公司
2SB108
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
深圳市威尔健半导体有限公司
2SB1079功率三极管
HITACHI/日立
23+
TO3P
50000
全新原装正品现货,支持订货
询价
深圳市卓越微芯电子有限公司
2SB108040AML
SILAN
25+
CDIP
4100
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市一线半导体有限公司
2SB1079
24+
60000
询价
深圳市豪迈兴电子有限公司
2SB108
NEC
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市宏捷佳电子科技有限公司
2SB1079
HITACHI
2023+
TOP-3A
50000
原装现货
询价
深圳市中飞凌科技有限公司
2SB108
ST
26+
CAN to-39
60000
只有原装 可配单
询价
深圳市腾亿芯科技有限公司
2SB108
ST
25+
CAN to-39
20000
原装，请咨询
询价

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2SB107规格书下载地址

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  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号

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